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Hongqi Xu

Researcher at Peking University

Publications -  319
Citations -  14424

Hongqi Xu is an academic researcher from Peking University. The author has contributed to research in topics: Nanowire & Quantum dot. The author has an hindex of 54, co-authored 317 publications receiving 12828 citations. Previous affiliations of Hongqi Xu include Linköping University & Dalian University of Technology.

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Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.

TL;DR: It is shown that this zero-bias conductance peak structure in the Nb-InSb nanowire-Nb hybrid quantum device can persist over a large range of applied magnetic fields and could be interpreted as a transport signature of Majorana fermions in the InSb Nanowire.
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InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

TL;DR: It is reported that arrays of p-i-n InP nanowires (that switch from positive to negative doping), grown to millimeter lengths, can be optimized by varying the nanowire diameter and length of the n-doped segment, which are comparable to the best planar InP photovoltaics.
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Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device

TL;DR: In this paper, the excitation of Majorana fermions in a Nb-InSb nanowire quantum dot-Nb hybrid system was observed, and the measured zero-bias conductance for the hybrid device showed a conductance plateau in a range of the applied magnetic field in quasi-particle Coulomb blockade regions.
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Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

TL;DR: In this paper, transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact are presented, and a crossover in magnetoconductance is observed: magnetic fields above similar to 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance (multichannel) regime.