An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

A method of manufacturing a flexible display device is provided. The method includes: preparing a first flexible substrate on which a display unit is formed; forming an encapsulation unit including a base substrate, a second flexible substrate formed on the base substrate, and a barrier layer formed on the second flexible substrate; combining the encapsulation unit with the display unit; and separating the base substrate from the second flexible substrate by using a difference between a coefficient of thermal expansion of the base substrate and a coefficient of thermal expansion of the second flexible substrate, by applying a heated solution between the base substrate and the second flexible substrate. The flexible display device is easily manufactured since the base substrate and the second flexible substrate, which have different coefficients of thermal expansion and are coupled to each other, are separable from each other by applying the heated solution.

Method of manufacturing flexible display device

This paper reports a low-temperature polycrystalline silicon (LTPS) fabrication process on plastic substrate for a flexible AMOLED display. Characteristics of fabricated TFTs showed excellent performance with field effect mobility of 124.1 cm2/V-s, on/off ratio of >108, subthreshold slope of 0.30V/dec, and threshold voltage of −2.03V. Internal scan drive circuits, 1:3 demux, and compensation circuits were successfully integrated on the backplane of a 166ppi 2.8″ WQVGA flexible AMOLED panel.

47.2: 2.8-inch WQVGA Flexible AMOLED Using High Performance Low Temperature Polysilicon TFT on Plastic Substrates

A display device and a manufacturing method thereof are provided. The display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines., a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

Display device and manufacturing method thereof

Embodiments of the present invention generally relate to a touch sensible organic light emitting device. The organic light emitting device according to an exemplary embodiment of the present invention comprises: a substrate; a thin film transistor disposed on the substrate; an organic light emitting element connected to the thin film transistor and receiving a data voltage; a plurality of encapsulation thin films disposed on the organic light emitting element, and encapsulating the thin film transistor and the organic light emitting element; a planarization layer disposed on the encapsulation thin film; and a touch sensor disposed on the planarization layer.

Touch sensible organic light emitting device

A new flexible TFT backplane structure with improved mechanical reliability has been fabricated on a plastic substrate using amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors. The panel withstood 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After the bending test, change of Vth, mobility, sub-threshold slope, and gate leakage current were only −0.10V, −0.11cm2/V-s, 0.01V/decade, and −1.03×10-−12A, respectively. No line defects, dark spots, or bright spots appeared after 10K bending cycles at a bend radius of 10 mm.

Hoon-Kee Min

Papers

Method of manufacturing flexible display device

47.2: 2.8-inch WQVGA Flexible AMOLED Using High Performance Low Temperature Polysilicon TFT on Plastic Substrates

Display device and manufacturing method thereof

Touch sensible organic light emitting device

47.1: Invited Paper: Highly Robust Flexible AMOLED Display on Plastic Substrate with New Structure