Journal ArticleDOI
47.2: 2.8-inch WQVGA Flexible AMOLED Using High Performance Low Temperature Polysilicon TFT on Plastic Substrates
Sung-Guk An,Jae-Seob Lee,Young-Gu Kim,Tae-Woong Kim,Dong-un Jin,Hoon-Kee Min,Ho-Kyoon Chung,Sang-soo Kim +7 more
- Vol. 41, Iss: 1, pp 706-709
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TLDR
In this paper, a low-temperature polycrystalline silicon (LTPS) fabrication process on a plastic substrate for a flexible AMOLED display was reported. But the performance of fabricated TFTs showed excellent performance with field effect mobility of 124.1 cm2/V-s, on/off ratio of >108, subthreshold slope of 0.30V/dec, and threshold voltage of −2.03V.Abstract:
This paper reports a low-temperature polycrystalline silicon (LTPS) fabrication process on plastic substrate for a flexible AMOLED display. Characteristics of fabricated TFTs showed excellent performance with field effect mobility of 124.1 cm2/V-s, on/off ratio of >108, subthreshold slope of 0.30V/dec, and threshold voltage of −2.03V. Internal scan drive circuits, 1:3 demux, and compensation circuits were successfully integrated on the backplane of a 166ppi 2.8″ WQVGA flexible AMOLED panel.read more
Citations
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Journal ArticleDOI
Low-Power Flexible Organic Light-Emitting Diode Display Device
Sunkook Kim,Hyuk-Jun Kwon,Sunghun Lee,Hong-shik Shim,Youngtea Chun,Woong Choi,Jin-ho Kwack,Dong-Won Han,Myoung-Seop Song,Sungchul Kim,Saeed Mohammadi,In-Seo Kee,Sang Yoon Lee +12 more
TL;DR: In order to achieve a highly fl exible OLED display device, the following characteristics are needed: i) a low temperature process to prevent deformation in plastic substrates, ii) a new optical architecture providing both fl exibility and high outdoor readability, iii) a thinner and lighter platform than for current OLED technologies that allows bending and folding.
Journal ArticleDOI
A Highly Sensitive Capacitive Touch Sensor Integrated on a Thin-Film-Encapsulated Active-Matrix OLED for Ultrathin Displays
Sunkook Kim,Woong Choi,Woojin Rim,Youngtea Chun,Hongsik Shim,Hyuk-Jun Kwon,Jong-Soo Kim,In-Seo Kee,Sungchul Kim,Sang Yoon Lee,Jongsun Park +10 more
TL;DR: In this article, the optimal structure of the electrically noise-free capacitive touch sensor, which is assembled on a thin-film-encapsulated active-matrix OLED (AMOLED) display, is obtained by investigating the internal electrical field distribution and capacitance change.
Journal ArticleDOI
An OTFT-driven rollable OLED display
Makoto Noda,Norihito Kobayashi,Mao Katsuhara,Akira Yumoto,Shinichi Ushikura,Ryouichi Yasuda,Nobukazu Hirai,Gen Yukawa,Iwao Yagi,Kazumasa Nomoto,Tetsuo Urabe +10 more
TL;DR: In this paper, an 80μm-thick rollable AMOLED display driven by an OTFT gate driver circuit was reported, which was successfully operated by an originally developed organic semiconductor, a peri-xanthenoxanthene derivative.
Journal ArticleDOI
Polysilicon thin-film transistors on polymer substrates
TL;DR: Different approaches to fabricate low-temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) on polymer substrates are reviewed and the two main routes are discussed as discussed by the authors.
Journal ArticleDOI
Flexible sensing systems based on polysilicon thin film transistors technology
Luca Maiolo,Alessandro Pecora,Francesco Maita,Antonio Minotti,Emiliano Zampetti,S. Pantalei,Antonella Macagnano,Andrea Bearzotti,Davide Ricci,Guglielmo Fortunato +9 more
TL;DR: In this article, both chemical and physical sensors are integrated with low temperature polycrystalline silicon (LTPS) front-end electronics, where sensors and local signal conditioning circuits can be integrated on the same flexible substrate.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic
Alessandro Pecora,Luca Maiolo,Massimo Cuscunà,D. Simeone,Antonio Minotti,L. Mariucci,Guglielmo Fortunato +6 more
TL;DR: In this article, a low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) fabrication process on polyimide (PI) layers is presented.
Journal ArticleDOI
Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors
Ping Mei,J. B. Boyce,M. Hack,R. A. Lujan,Richard I. Johnson,G. B. Anderson,David K. Fork,Steve E. Ready +7 more
TL;DR: In this article, a low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a•Si:H) has been developed, which removes hydrogen by laser irradiations at three energy steps.
Journal ArticleDOI
Surface roughness effects in laser crystallized polycrystalline silicon
TL;DR: Two surface roughening mechanisms have been distinguished in laser crystallized polycrystalline Si: one is related to rapid release of hydrogen from hydrogen-rich plasma enhanced chemical vapor deposited amorphous Si and the other is independent of the hydrogen content of the material and is determined by the total number of pulses incident on the surface as discussed by the authors.
Journal ArticleDOI
Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150°C
TL;DR: In this article, the authors report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser and report the grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM).