H
Huihui Yu
Researcher at University of Science and Technology Beijing
Publications - 24
Citations - 453
Huihui Yu is an academic researcher from University of Science and Technology Beijing. The author has contributed to research in topics: van der Waals force & Semiconductor. The author has an hindex of 6, co-authored 17 publications receiving 103 citations.
Papers
More filters
Journal ArticleDOI
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions.
Xiankun Zhang,Baishan Liu,Gao Li,Huihui Yu,Xiaozhi Liu,Junli Du,Jiankun Xiao,Yihe Liu,Lin Gu,Qingliang Liao,Zhuo Kang,Zheng Zhang,Yue Zhang +12 more
TL;DR: In this article, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.
Journal ArticleDOI
Piezotronic effect on interfacial charge modulation in mixed-dimensional Van der Waals heterostructure for ultrasensitive flexible photodetectors
Junli Du,Qingliang Liao,Mengyu Hong,Baishan Liu,Xiankun Zhang,Huihui Yu,Jiankun Xiao,Gao Li,Fangfang Gao,Zhuo Kang,Zheng Zhang,Yue Zhang +11 more
TL;DR: In this paper, a novel strain-gating method was proposed to manipulate 2D WSe2-1D ZnO vdWs interfacial charge and modulate its photosensing performance.
Journal ArticleDOI
Hidden Vacancy Benefit in Monolayer 2D Semiconductors
Xiankun Zhang,Qingliang Liao,Zhuo Kang,Baishan Liu,Xiaozhi Liu,Yang Ou,Jiankun Xiao,Junli Du,Yihe Liu,Gao Li,Lin Gu,Mengyu Hong,Huihui Yu,Zheng Zhang,Xiangfeng Duan,Yue Zhang +15 more
TL;DR: In this paper, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported, by purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7%.