Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Acenes have long been the subject of intense study because of the unique electronic properties associated with their pi-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships.

The larger acenes: versatile organic semiconductors.

Recently, we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs). A material exploration of AOSs desired as the channel layer in TFTs is most important for developing high-performance devices. Here, we report our concept of material exploration for AOSs in high-performance flexible and transparent TFTs from the viewpoints of chemical bonding and electronic structure in oxide semiconductors. We find that amorphous In–Ga–Zn–O (a-IGZO) exhibits good carrier transport properties such as reasonably high Hall mobilities (>10 cm2V-1s-1) and a good controllability of carrier concentration from <1015 to 1020 cm-3. In addition, a-IGZO films have better chemical stabilities in ambient atmosphere and at temperatures up to 500 °C. The flexible and transparent TFT fabricated using a-IGZO channel layer at room temperature operated with excellent performances, such as normally-off characteristics, on/off current ratios (~106) and field-effect mobilities (~10 cm2V-1s-1), which are higher by an order of magnitude than those of amorphous Si:H and organics TFTs.

https://iopscience.iop.org/article/10.1143/JJAP.45.4303/pdf

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from ∼10−3to10−6Scm−1 by varying the mixing ratio of sputtering gases, O2∕(O2+Ar), from ∼3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12cm2V−1s−1, an on-off current ratio of ∼108, and a subthreshold gate voltage swing of 0.2Vdecade−1. It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means.

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Organic flexible electronics are being developed for computer displays, radio frequency identification tags, sensors and devices that have not been dreamt of yet. Practical applications so far are few, as their electrical performance is poor compared with conventional electronics. In terms of charge carrier mobility, however, field-effect transistors made of organic single crystals have a very high performance. The obstacle to the use of single-crystal devices is that they have to be individually hand-made. The report of a method of fabricating large arrays of high performance transistor devices by direct patterning of single crystals onto clean silicon surfaces or flexible plastics may help to change that. The new method retains the high performance of field-effect transistors even after significant bending. Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials1. Their outstanding device performance2,3,4,5,6,7,8, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer9,10 minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals—a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays11,12,13, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported14,15. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source–drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO2 surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm2 V-1 s-1 and on/off ratios greater than 107, and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.

/pdf/patterning-organic-single-crystal-transistor-arrays-s5kqq5virc.pdf

Patterning organic single-crystal transistor arrays.

After spinal cord injury, the disruption of blood-spinal cord barrier by activation of matrix metalloprotease is a critical event leading to infiltration of blood cells, inflammatory responses and neuronal cell death, contributing to permanent neurological disability. Recent evidence indicates that fluoxetine, an anti-depressant drug, is shown to have neuroprotective effects in ischaemic brain injury, but the precise mechanism underlying its protective effects is largely unknown. Here, we show that fluoxetine prevented blood-spinal cord barrier disruption via inhibition of matrix metalloprotease activation after spinal cord injury. After a moderate contusion injury at the T9 level of spinal cord with an infinite horizon impactor in the mouse, fluoxetine (10 mg/kg) was injected intraperitoneally and further administered once a day for indicated time points. Fluoxetine treatment significantly inhibited messenger RNA expression of matrix metalloprotease 2, 9 and 12 after spinal cord injury. By zymography and fluorimetric enzyme activity assay, fluoxetine also significantly reduced matrix metalloprotease 2 and matrix metalloprotease 9 activities after injury. In addition, fluoxetine inhibited nuclear factor kappa B-dependent matrix metalloprotease 9 expression in bEnd.3, a brain endothelial cell line, after oxygen-glucose deprivation/reoxygenation. Fluoxetine also attenuated the loss of tight junction molecules such as zona occludens 1 and occludin after injury in vivo as well as in bEnd.3 cultures. By immunofluorescence staining, fluoxetine prevented the breakdown of the tight junction integrity in endothelial cells of blood vessel after injury. Furthermore, fluoxetine inhibited the messenger RNA expression of chemokines such as Groα, MIP1α and 1β, and prevented the infiltration of neutrophils and macrophages, and reduced the expression of inflammatory mediators after injury. Finally, fluoxetine attenuated apoptotic cell death and improved locomotor function after injury. Thus, our results indicate that fluoxetine improved functional recovery in part by inhibiting matrix metalloprotease activation and preventing blood-spinal cord barrier disruption after spinal cord injury. Furthermore, our study suggests that fluoxetine may represent a potential therapeutic agent for preserving blood-brain barrier integrity following ischaemic brain injury and spinal cord injury in humans.

/pdf/fluoxetine-inhibits-matrix-metalloprotease-activation-and-4haxo9zbwg.pdf

Fluoxetine inhibits matrix metalloprotease activation and prevents disruption of blood–spinal cord barrier after spinal cord injury

Self‐Organized Organic Thin‐Film Transistors on Plastic

The disruption of blood-spinal cord barrier (BSCB) after spinal cord injury (SCI) elicits an intensive local inflammation by the infiltration of blood cells such as neutrophils and macrophages, leading to cell death and permanent neurological disability. SCI activates matrix metalloprotease-9 (MMP-9), which is known to induce BSCB disruption. Here, we examined whether valproic acid (VPA), a histone deacetylase inhibitor, would attenuate BSCB disruption by inhibiting MMP-9 activity, leading to improvement of functional outcome after SCI. After moderate spinal cord contusion injury at T9, VPA (300 mg/kg) were immediately injected subcutaneously and further injected every 12 h for 5 days. Our data show that VPA inhibited MMP-9 activity after injury, and attenuated BSCB permeability and degradation of tight junction molecules such as occludin and ZO-1. In addition, VPA reduced the expression of inflammatory mediators including tumor necrosis factor-α. Furthermore, VPA increased the levels of acetylated histone 3, pAkt, and heat-shock protein 27 and 70, which have anti-apoptotic functions after SCI. Finally, VPA inhibited apoptotic cell death and caspase 3 activation, reduced the lesion volume and improved functional recovery after injury. Thus, our results demonstrated that VPA improves functional recovery by attenuating BSCB disruption via inhibition of MMP-9 activity after SCI.

https://onlinelibrary.wiley.com/doi/pdf/10.1111/j.1471-4159.2012.07731.x

Valproic acid attenuates blood-spinal cord barrier disruption by inhibiting matrix metalloprotease-9 activity and improves functional recovery after spinal cord injury.

Both oxidative stress and endoplasmic reticulum (ER) stress are known to contribute to secondary injury, ultimately leading to cell death after spinal cord injury (SCI). Here, we showed that valproic acid (VPA) reduced cell death of motor neurons by inhibiting cytochrome c release mediated by oxidative stress and ER stress after SCI. After SCI, rats were immediately injected with VPA (300 mg/kg) subcutaneously and further injected every 12 h for an indicated time period. Motor neuron cell death at an early time after SCI was significantly attenuated by VPA treatment. Superoxide anion (O2-) production and inducible NO synthase (iNOS) expression linked to oxidative stress was increased after injury, which was inhibited by VPA. In addition, VPA inhibited c-Jun N-terminal kinase (JNK) activation, which was activated and peaked at an early time after SCI. Furthermore, JNK activation and c-Jun phosphorylation were inhibited by a broad-spectrum reactive oxygen species (ROS) scavenger, Mn (III) tetrakis ...

/pdf/valproic-acid-protects-motor-neuron-death-by-inhibiting-fan1lidgmp.pdf

Valproic acid protects motor neuron death by inhibiting oxidative stress and endoplasmic reticulum stress-mediated cytochrome C release after spinal cord injury.

Hye Young Choi

Papers

Fluoxetine inhibits matrix metalloprotease activation and prevents disruption of blood–spinal cord barrier after spinal cord injury

Self‐Organized Organic Thin‐Film Transistors on Plastic

Valproic acid attenuates blood-spinal cord barrier disruption by inhibiting matrix metalloprotease-9 activity and improves functional recovery after spinal cord injury.

Valproic acid protects motor neuron death by inhibiting oxidative stress and endoplasmic reticulum stress-mediated cytochrome C release after spinal cord injury.

Fluoxetine inhibits transient global ischemia-induced hippocampal neuronal death and memory impairment by preventing blood-brain barrier disruption.