An integrated circuit includes: a) a semiconductor substrate; b) a first conductivity type substrate diffusion region within the semiconductor substrate, the first conductivity type substrate diffusion region being electrically conductive and having an outer first total area; c) a thin film polysilicon layer of the first conductivity type overlying and being in ohmic electrical connection with the substrate diffusion region; and d) a pillar of electrically conductive material extending outwardly from the thin film polysilicon layer over the electrically conductive diffusion region, the pillar having a total cross sectional second area where the pillar joins the thin film polysilicon layer, the second area being less than the outer first local area and being received entirely within the confines of the first area.

Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer

An improved and new structure and method for forming a guard ring in an integrated circuit having at least one level of polysilicon wiring has been developed. The guard ring is formed without necessitating additional manufacturing process steps and the guard ring is bonded to the semiconductor substrate, thereby providing a superior barrier to diffusion of moisture and contaminants from a window in the insulating layers to the semiconductor device regions.

Method of forming a moisture guard ring for integrated circuit applications

A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.

Method of Manufacturing Semiconductor Device

A process for creating self-aligned vertically arrayed planar transistors. The preferred embodiment relates to the simultaneous fabrication of both NPN and PNP planar vertically arrayed transistors in a conventional monolithic, epitaxial, PN junction isolated, integrated circuit. A field oxide is employed to surface isolate the devices and assist in the self-alignment improvement.

Self-aligned planar monolithic integrated circuit vertical transistor process

A lateral bipolar transistor and method of making the transistor which is compatible with a method of making MOS transistors to be used in making BICMOS circuits are disclosed. The method includes the following steps: Forming on the surface of a substrate of one conductivity type at least one layer of a semiconductor material of the opposite conductivity type. Forming a first region of the opposite conductivity type into one portion of the layer in one of the portions of the layer and a highly conductive contact region to the layer in another portion, forming a layer of an insulating material over the layer and providing an aperture therethrough to the first region. Depositing a layer of polycrystalline silicon over the insulating layer and in the aperture and defining the polycrystalline silicon layer so that it is in the aperture and extends a short distance beyond the aperture but not beyond the edge of the first region. Ion implanting a dopant of the opposite conductivity type into the defined portion of the polycrystalline silicon and into the portion of the first region which extends beyond the edge of the polycrystalline region to form a second region of the opposite conductivity type in the layer and around the first region. Annealing the substrate to drive the dopant from the conductive layer into the first region to form a third region of the opposite conductivity type in the first region and spaced from the third region.

Lateral bipolar transistor and method of making the same

Present invention relates to the fabrication method of the bipolar transistor which includes NPN transistor and field-plate lateral PNP transistor. The arsenic implanted polycrystalline silicon is used for the emitter electrode of NPN transistor to increase the current gain, and for the field-plate of the lateral PNP transistor to reduce the collector-emitter leakage current. Also, this polycrystalline silicon is used for the ion implanting mask for the extrinsic base of the NPN transistor and for the emitter, collector of the lateral PNP transistor simultaneously. Therefore, the extrinisc base of NPN transistor and the emitter, collector of the lateral PNP transistor are self-aligned by the polycrystalline silicon, and so one mask is saved by this method.

Fabrication method of bipolar transistor

Disclosed herein are a test apparatus of a fluidic sample, which tests the fluidic sample, and a control method thereof. The test apparatus of the fluidic sample includes a housing, an installing member in which a cartridge receiving a fluid is inserted, a pressing member which is disposed in the housing to press the cartridge and perform an inspection of the fluid, a driving unit of which at least a part is coupled to the pressing member so as to movably drive the pressing member, and a sensing unit of which at least a part is opposite to the driving unit so as to sense a position of the driving unit. According to the present invention, since the sensing unit can recognize the position of the driving unit, the pressing member can apply uniform pressure to the cartridge.

Hyun Suk Kang

Papers

Fabrication method of bipolar transistor

Test apparatus of fluidic sample and control method thereof