Recent progress on thin-film encapsulation technologies for organic electronic devices

Organic electronic devices require a passivation layer that protects the active layers from moisture and oxygen because most organic materials are very sensitive to such gases. Passivation films for the encapsulation of organic electronic devices need excellent stability and mechanical properties. Although Al2O3 films obtained with plasma enhanced atomic layer deposition (PEALD) have been tested as passivation layers because of their excellent gas barrier properties, amorphous Al2O3 films are significantly corroded by water. In this study, we examined the deformation of PEALD Al2O3 films when immersed in water and attempted to fabricate a corrosion-resistant passivation film by using a PEALD-based Al2O3/TiO2 nanolamination (NL) technique. Our Al2O3/TiO2 NL films were found to exhibit excellent water anticorrosion and low gas permeation and require only low-temperature processing (<100 °C). Organic thin film transistors with excellent air-stability (52 days under high humidity (a relative humidity of 90% a...

Al2O3/TiO2 nanolaminate thin film encapsulation for organic thin film transistors via plasma-enhanced atomic layer deposition.

After efficiency, lifetime is the second most important parameter for organic devices. Interfaces play a major role in that lifetime. This article reviews the current state of the art with regards to interfacial stability and control of electrode/active layer interfaces to understand the performance of organic optoelectronic devices. From examples relating to interfacial chemical reactions, interfacial morphological changes, and interfacial electronic level modification, a comprehensive picture of the role of the organic–electrode interfaces in device stability can be formed. The review begins with a brief overview of degradation in organic devices, including definitions and measurement approaches. It is then broken into two sections. The first focuses on the bottom contact (substrate) interface, specifically chemical reactions and dewetting, as the two main mechanisms of device degradation. The second section examines the top contact interface, which is prone to oxidation, interdiffusion, blistering and delamination, and inhomogeneous loss of performance (dark spots). For both sections, various approaches to overcoming device instabilities are given, with special attention to the various interlayers that have been introduced into devices for improved stability. Each section also includes examples where the main degradation mechanism is used advantageously to produce novel device architectures and surprising solutions to device degradation.

Interfacial degradation in organic optoelectronics

Thin-film encapsulation of top-emission organic light-emitting devices with polyurea/Al2O3 hybrid multi-layers

Encapsulation is essential for protecting the air-sensitive components of organic light-emitting diodes (OLEDs), such as the active layers and cathode electrodes. Thin film encapsulation approaches based on an oxide layer are suitable for flexible electronics, including OLEDs, because they provide mechanical flexibility, the layers are thin, and they are easy to prepare. This study examined the effects of the oxide ratio on the water permeation barrier properties of Al2O3/TiO2 nanolaminate films prepared by plasma-enhanced atomic layer deposition. We found that the Al2O3/TiO2 nanolaminate film exhibited optimal properties for a 1:1 atomic ratio of Al2O3/TiO2 with the lowest water vapor transmission rate of 9.16 × 10−5 g m−2 day−1 at 60 °C and 90% RH. OLED devices that incorporated Al2O3/TiO2 nanolaminate films prepared with a 1:1 atomic ratio showed the longest shelf-life, in excess of 2000 hours under 60 °C and 90% RH conditions, without forming dark spots or displaying edge shrinkage.

Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition

The thin-film passivation of organic light-emitting diodes (OLEDs) by a SiNx film grown by catalyzer-enhanced chemical vapor deposition was investigated Using a tungsten catalyzer connected in series, a high-density SiNx passivation layer was deposited on OLEDs and bare polycarbonate (PC) substrates at a substrate temperature of 50°C Despite the low substrate temperature, the single SiNx passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of (2–6)×10−2g∕m2∕day and a high transmittance of 87% In addition, current-voltage-luminescence results of an OLED passivated with a 150-nm-thick SiNx film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the SiNx deposition Moreover, the lifetime to half initial luminance of an OLED passivated with the single 150-nm-thick SiNx layer was 25 times longer than that of a nonpassivated sample

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High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

http://home.skku.edu/~nesel/paper%20files/40.pdf

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Disclosed are a refrigerator and a method of manufacturing a door of the refrigerator. The door includes a door frame formed with at least one opening, at least one front panel coupled to a front surface of the door frame to open or close the opening, a rear panel coupled to a rear surface of the door frame to form a foaming cavity together with the front panel and provided with a rack receiving water bottles, and a decorative member formed at a front surface of the front panel. A chamfer is formed at an edge portion of the door frame.

Refrigerator and method of manufacturing door thereof

Present invention relates to the fabrication method of the bipolar transistor which includes NPN transistor and field-plate lateral PNP transistor. The arsenic implanted polycrystalline silicon is used for the emitter electrode of NPN transistor to increase the current gain, and for the field-plate of the lateral PNP transistor to reduce the collector-emitter leakage current. Also, this polycrystalline silicon is used for the ion implanting mask for the extrinsic base of the NPN transistor and for the emitter, collector of the lateral PNP transistor simultaneously. Therefore, the extrinisc base of NPN transistor and the emitter, collector of the lateral PNP transistor are self-aligned by the polycrystalline silicon, and so one mask is saved by this method.

Fabrication method of bipolar transistor

Disclosed are a refrigerator and a method of manufacturing a door (20a,20b) of the refrigerator. The door (20) includes a door frame (30) formed with at least one opening, at least one front panel (40) coupled to a front surface of the door frame to open or close the opening, a rear panel (50) coupled to a rear surface of the door frame to form a foaming cavity together with the front panel and provided with a rack (14) receiving water bottles, and a decorative member (60) formed at a front surface of the front panel. A chamfer (32c) is formed at an edge portion of the door frame (30).

Myung Soo Kim

Papers

High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Refrigerator and method of manufacturing door thereof

Fabrication method of bipolar transistor

Refrigerator and method of manufacturing a door thereof