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Showing papers by "Hyungsoo Kim published in 2005"


Journal ArticleDOI
Jun Ho Lee1, Hyungsoo Kim1, Joungho Kim1
TL;DR: In this paper, a high dielectric constant thin film electromagnetic bandgap (EBG) power distribution network (PDN) was used for the suppression of power/ground noises and radiated emissions in high-performance multilayer digital printed circuit boards (PCBs).
Abstract: We experimentally demonstrated the great advantages of a high dielectric constant thin film electromagnetic bandgap (EBG) power distribution network (PDN) for the suppression of power/ground noises and radiated emissions in high-performance multilayer digital printed circuit boards (PCBs). Five-layer test PCBs were fabricated and their scattering parameters measured. The power plane noise and radiated emissions were measured, investigated and related to the PDN impedance. This successfully demonstrated that the bandgap of the EBG was extended more than three times, covering a range of hundreds of MHz using a 1-cm /spl times/ 1-cm EBG cell, the SSN was reduced from 170 mV to 10 mV and the radiated emission was suppressed by 22 dB because of the high dielectric constant thin film EBG power/ground network.

54 citations


Journal ArticleDOI
Junwoo Lee1, Mihai Rotaru, M. Iyer, Hyungsoo Kim, Joungho Kim 
TL;DR: In this paper, the authors introduced a model of simultaneous switching noise coupling between the power/ground plane cavities through cutouts in high-speed and high-density multilayer packages and printed circuit boards (PCBs).
Abstract: The authors introduced a model of simultaneous switching noise (SSN) coupling between the power/ground plane cavities through cutouts in high-speed and high-density multilayer pack-ages and printed circuit boards (PCBs). Usually, the cutouts are used in multilayer plane structures to isolate the SSN of noisy digital circuits from sensitive analog circuits or to provide multiple voltage levels. The noise-coupling model is expressed in terms of the transfer impedance. The proposed modeling and analysis results are compared with measured data up to 10 GHz to demonstrate the validity of the model. It is demonstrated that the cutout is the major gate for SSN coupling between the plane cavities, and that substantial SSN coupling occurs between the plane cavities through the cutout at the resonant frequencies of the plane cavities. The coupling mechanism and characteristics of the noise coupling, from which a method of suppression of the SSN coupling evaluated was also analyzed and discussed. Proper positioning of the cutout and the devices at each plane cavity achieves significant noise suppression at certain resonant frequencies. The suggested suppression method of the SSN coupling was successfully proved by frequency domain measurement and time domain analysis.

36 citations


Proceedings ArticleDOI
Jun Ho Lee1, Hyungsoo Kim1, Joungho Kim1
03 Oct 2005
TL;DR: In this article, the power plane noises and radiated emissions were measured, investigated and related to the PDN impedance and S/sub 21/ measured, and the authors successfully demonstrated that the band-gap of the EBG was extended more than three times, covering a range from 300 MHz to 3.6 GHz using feasible EBG cell size.
Abstract: In this paper, the great advantages of a high dielectric constant thin film EBG power distribution network (PDN) for the suppression of power/ground noises and radiated emissions in high-performance multi-layer digital PCBs were experimentally demonstrated. Five-layer test PCBs were fabricated and their self PDN impedance and S/sub 21/ measured. The power plane noises and radiated emissions were measured, investigated and related to the PDN impedance. This successfully demonstrated that the band-gap of the EBG was extended more than three times, covering a range from 300 MHz to 3.6 GHz using feasible EBG cell size (1 cm /spl times/ 1 cm), the power plane noise was reduced greatly over a broadband spectrum including hundreds of MHz range and the radiated emission was suppressed by 22 dB owing to the outstanding noise isolation efficiency of the high dielectric constant thin film EBG PDN.

13 citations


Proceedings ArticleDOI
20 Jun 2005
TL;DR: In this paper, the co-modeling and co-simulation results about the package and on-chip power/ground network have been demonstrated and the inevitable parallel resonance peak, due to the inductive parasitic on the package, was analyzed in frequency domain.
Abstract: The co-modeling and co-simulation results about the package and on-chip power/ground network have been demonstrated. The inevitable parallel resonance peak, due to the inductive parasitic on the package and on-chip decoupling capacitor, was analyzed in frequency domain. Subsequently, the co-design procedure for the resonant free power/ground network was suggested and evaluated simply in frequency domain.

11 citations


Journal Article
TL;DR: In this paper, the authors used epoxy/BaTiO 3 composite embedded capacitor paste (ECP) to achieve high dielectric constant and low-tolerance (less than ±5%) embedded capacitor fabrication for organic substrates.
Abstract: Epoxy/BaTiO 3 composite embedded capacitor films (ECFs) were newly designed for high dielectric constant and low-tolerance (less than ±5%) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of a specially formulated epoxy resin and latent curing agent, and in terms ofa coating process, a comma roll coating method is used for uniform film thickness in large area. The dielectric constant of ECF in high frequency range (0.5∼3 GHz) is measured using the cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. The dielectric constant is calculated by observing the frequencies of the resonant cavity modes. Calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of the epoxy matrix. The dielectric relaxation of barium titanate (BaTiO 3 : BT) powder is not observed within measured frequency. An alternative material for embedded capacitor fabrication is epoxy

11 citations


Proceedings ArticleDOI
29 Aug 2005
TL;DR: A chip-package hybrid DLL and clock distribution network provides low-jitter clock signals by utilizing separate supply connections and lossless package layer interconnections instead of on-chip global wires.
Abstract: A chip-package hybrid DLL and clock distribution network provides low-jitter clock signals by utilizing separate supply connections and lossless package layer interconnections instead of on-chip global wires. The hybrid scheme has 78ps/sub co/ jitter and under 240mV digital noise at 500MHz, while a conventional scheme has a 172ps/sub p-p/ jitter under the same conditions.

7 citations


Proceedings ArticleDOI
23 May 2005
TL;DR: It is demonstrated that the via is a major source of the SSN (simultaneous switching noise) generation, coupling, and edge radiated emission in multi-layer packages and PCBs.
Abstract: The return current path is the most critical part of high-speed interconnection design in both package and PCB. When the return current path is disturbed, significant amount of noise generation, coupling, and radiated emission problems occur. Signal vias and power/ground vias produce a return current path disconnect problem. In this paper, we demonstrate that the via is a major source of the SSN (simultaneous switching noise) generation, coupling, and edge radiated emission in multi-layer packages and PCBs.

6 citations


Proceedings ArticleDOI
Kyung-Wook Paik1, Sung-Dong Cho1, Jin-Gul Hyun1, Sangyong Lee1, Hyungsoo Kim, Joungho Kim 
16 Mar 2005
TL;DR: In this article, an epoxy/BaTiO/sub 3/ composite embedded capacitor films (ECFs) were newly designed for high dielectric constant and low tolerance (less than /spl plusmn/5%) embedded capacitor fabrication in organic substrates.
Abstract: Epoxy/BaTiO/sub 3/ composite embedded capacitor films (ECFs) were newly designed for high dielectric constant and low tolerance (less than /spl plusmn/5%) embedded capacitor fabrication in organic substrates In terms of material formulation, ECFs were composed of specially formulated epoxy resin and latent curing agent And in terms of coating process, a comma roll coating method was used for a uniform film thickness over large area Dielectric constants of BaTiO/sub 3/ & SrTiO/sub 3/ composite ECFs were measured with MIM (metal-insulator-metal) capacitors at 100 kHz using LCR meter Dielectric constants of BaTiO/sub 3/ ECFs were larger than these of SrTiO/sub 3/ ECFs, due to the difference of permittivity of BaTiO/sub 3/ and SrTiO/sub 3/ particles Dielectric constants of BaTiO-, & SrTiO/sub 3/ ECFs at high frequency range (05/spl sim/10GHz) were measured using a cavity resonance method For both powders, dielectric constants in high frequency range were about 3/4 of the dielectric constants at 1 MHz This difference is mainly due to the decrease of dielectric constant of epoxy matrix For BaTiO/sub 3/ ECFs, there was a dielectric relaxation at 5/spl sim/9GHz presumably due to the polarization mode change of BaTiO/sub 3/ powder However in case of SrTiO/sub 3/ ECFs, there was no relaxation up to 10GHz