I. Fasaki

TL;DR: In this paper, the structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure, and they exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30eV and 256-627nm, respectively.

TL;DR: In this article, NiO thin films were grown by pulsed laser deposition on (100)Si substrates at 200 °C temperature and the effect of the O2 pressure during the deposition process on the morphological, electrical and sensing properties of the films has been investigated.

TL;DR: In this paper, a transparent nickel oxide thin film was grown by reactive pulsed laser deposition, where an ArF* (λ=193 nm, τ=12 ns) excimer laser source was used to ablate the Ni targets in a controlled pressure of ambient oxygen.

TL;DR: In this paper, a transparent zinc oxide thin film was grown by reactive pulsed laser deposition on glass substrates, where the substrate was kept at 200°C constant temperature and post-deposition heat treatment, applied to further promote crystallization and overcome any oxygen deficiency, yielded transparent thin films.

TL;DR: In this paper, two actively synchronized nanosecond laser sources, a KrF excimer laser (248 nm) and a Nd:YAG laser (355 nm), were used for the simultaneous ablation of nickel and gold targets in oxygen ambient.