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I.P. Ipatova
Researcher at Russian Academy of Sciences
Publications - 4
Citations - 1430
I.P. Ipatova is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 2, co-authored 4 publications receiving 1415 citations.
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Electron-phonon coupling in highly doped n type silicon
TL;DR: In this paper, the effect of free electrons on the optical phonon of silicon at the center of the Brillouin zone is studied using the Raman scattering technique, and the profile factor which is related to disymetry is shown to have the signes of the matrix elements of the electron-phonon interaction.
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The influence of surface vibrations on the equilibrium doping of a semiconductor
TL;DR: In this article, the authors calculate the distribution coefficient of impurities in a system of gas + crystal, and show that the qualitative change in the vibrational spectrum of the crystal due to the presence of surface modes, and of localized and quasi-localized impurity modes, significantly changes the equilibrium concentration of impurity in the crystal, at a given temperature, by as much as an order of magnitude or more.
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The influence of boron localized vibrations on the equilibrium distribution of boron between the surface and bulk of a silicon crystal
TL;DR: In this paper, the distribution coefficient of boron in the system of silicon crystal + Boron surface phase is calculated in a wide temperature range and the effect of localized vibrations is included in the calculation.