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Idris A. Ajia
Researcher at King Abdullah University of Science and Technology
Publications - 23
Citations - 923
Idris A. Ajia is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Nanowire & Quantum dot. The author has an hindex of 12, co-authored 21 publications receiving 652 citations. Previous affiliations of Idris A. Ajia include University of Southampton.
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Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.
Purushothaman Varadhan,Hui-Chun Fu,Davide Priante,José Ramón Durán Retamal,Chao Zhao,Mohamed Ebaid,Tien Khee Ng,Idris A. Ajia,Somak Mitra,Iman S. Roqan,Boon S. Ooi,Jr-Hau He +11 more
TL;DR: This work addresses the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol).
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Extremely reduced dielectric confinement in two-dimensional hybrid perovskites with large polar organics
Bin Cheng,Ting-You Li,Partha Maity,Pai-Chun Wei,Dennis Nordlund,Kang-Ting Ho,Der Hsien Lien,Chun-Ho Lin,Ru-Ze Liang,Xiaohe Miao,Idris A. Ajia,Jun Yin,Dimosthenis Sokaras,Ali Javey,Iman S. Roqan,Omar F. Mohammed,Jr-Hau He +16 more
TL;DR: In this paper, the authors theoretically predict that an extremely low exciton binding energy can be achieved in 2D perovskites by using high dielectric-constant organic components.
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Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
Chao Zhao,Tien Khee Ng,Rami T. ElAfandy,Aditya Prabaswara,Giuseppe Bernardo Consiglio,Idris A. Ajia,Iman S. Roqan,Bilal Janjua,Chao Shen,Jessica Eid,Ahmed Y. Alyamani,Munir M. El-Desouki,Boon S. Ooi +12 more
TL;DR: The monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-tem temperature harsh environment.
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A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity.
TL;DR: In this paper, an n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time.
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High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation
Somak Mitra,Assa Aravindh,Gobind Das,Yusin Pak,Idris A. Ajia,Kalaivanan Loganathan,Enzo Di Fabrizio,Iman S. Roqan +7 more
TL;DR: In this article, high-performance deep ultraviolet (DUV) photodetectors operating at ambient conditions were used for DUV-based DUV photodeter detection.