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José Ramón Durán Retamal

Researcher at King Abdullah University of Science and Technology

Publications -  35
Citations -  1828

José Ramón Durán Retamal is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Resistive random-access memory & Responsivity. The author has an hindex of 19, co-authored 33 publications receiving 1313 citations. Previous affiliations of José Ramón Durán Retamal include National Taiwan University & ICFO – The Institute of Photonic Sciences.

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Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.

TL;DR: This work addresses the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol).
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Probing surface band bending of surface-engineered metal oxide nanowires.

TL;DR: In this article, the surface band bending (SBB) was probed by ultraviolet photoelectron spectroscopy (UPS) in conjunction with field effect transistor measurements on the incompletely depleted ZnO nanowires.
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Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication

TL;DR: This work highlighted that a tradeoff exists in operating the blue LDs at optimum bias condition while maintaining good color temperature, and achieved significantly higher data rates by using LDs and spectral-efficient orthogonal frequency division multiplexing encoding scheme.
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Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

TL;DR: In this paper, the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals were investigated and a photodetectivity of 1.4 × 1010 Jones was obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V.
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Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

TL;DR: In this article, the van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/musmovite) memristor was designed for a transparent soft device with high performance with a ON/OFF resistance ratio > 105, stable endurance to 103 cycles and long retention time of 105 s.