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Indrajit V. Bagal

Researcher at Chonnam National University

Publications -  40
Citations -  501

Indrajit V. Bagal is an academic researcher from Chonnam National University. The author has contributed to research in topics: Nanowire & Water splitting. The author has an hindex of 8, co-authored 26 publications receiving 218 citations.

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Cu2O as an emerging photocathode for solar water splitting - A status review

TL;DR: Recently, cuprous oxide (Cu2O) based photocathodes have gained research attention for hydrogen (H2) production through photoelectrochemical (PEC) water splitting reactions due to marginally lower synthesis cost and low energy intensity fabrication processes as mentioned in this paper.
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Single-step fabrication of 3D hierarchical ZnO/ZnS heterojunction branched nanowires by MOCVD for enhanced photoelectrochemical water splitting

TL;DR: In this paper, a scalable single-step growth of three-dimensional hierarchical ZnO/ZnS heterojunction branched nanowires (3D ZnOs/Zns h-b-NWs) on a Si substrate using MOCVD was reported.
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Hybrid material passivation approach to stabilize the silicon nanowires in aqueous electrolyte for high-energy efficient supercapacitor

TL;DR: In this article, a hybrid material passivation strategy was proposed to increase the energy storage capacity and aqueous electrolyte stability of silicon nanowires for high-energy efficient supercapacitor (SC) applications.
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Effect of crystal orientation of GaN/V2O5 core-shell nanowires on piezoelectric nanogenerators

TL;DR: In this article, GaN/V2O5 core-shell nanowire (NW) generators of controlled crystallographic orientations were fabricated, and the device performance was characterized.
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Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD

TL;DR: In this paper, the growth of GaN-based LEDs using metal-organic chemical vapor deposition (MOCVD) on an amorphous glass substrate has been demonstrated, and the InGaN/GaN multiple quantum well shells are conformally grown on semipolar { 11 2 ¯ 2 } growth facet of m-axial GaN core nanowires and resulted in reduced quantum confined Stark effect.