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Isaac Robin Abothu

Researcher at Georgia Tech Research Institute

Publications -  7
Citations -  83

Isaac Robin Abothu is an academic researcher from Georgia Tech Research Institute. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 5, co-authored 7 publications receiving 83 citations.

Papers
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Patent

Touch fingerprint sensor using 1-3 piezo composites and acoustic impediography principle

TL;DR: In this article, a method of making an integrated circuit device using copper metallization on 1-3 PZT composite is presented, which includes providing an overlay of electroplated immersion of gold (Au) to cover copper metal traces.
Patent

Integrating three-dimensional high capacitance density structures

TL;DR: In this article, three-dimensional dielectric structures on high surface area electrodes and fabrication methods are described. But they do not specify the fabrication methods for the fabrication of these structures.
Patent

Organic based dielectric materials and methods for minaturized RF components, and low temperature coefficient of permittivity composite devices having tailored filler materials

TL;DR: In this paper, the authors have discussed composite RF devices having low temperature coefficient of permittivity (TCP) and methods for fabricating same, including thin and thick film capacitors and antennas, which may be formed on or within an organic layer, silicon material, ceramic material, or ceramic composite material or insulating material.
Patent

Lead-free bonding systems

TL;DR: Nano-structured interconnect formation and a reworkable bonding process using solder films is demonstrated at a very fine pitch as mentioned in this paper, which can be used for pushing the limits of current flip chip bonding in terms of pitch, number of I/Os, superior combination of electrical and mechanical properties as well as reworkability.
Patent

Reactively formed integrated capacitors on organic substrates and fabrication methods

TL;DR: In this paper, organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates have been discussed, and a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm 2.