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Isao Hino

Researcher at NEC

Publications -  36
Citations -  1657

Isao Hino is an academic researcher from NEC. The author has contributed to research in topics: Laser & Metalorganic vapour phase epitaxy. The author has an hindex of 19, co-authored 36 publications receiving 1647 citations.

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Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

TL;DR: In this article, the band-gap energy (Eg) of metalorganic vapor phase epitaxially (MOVPE) grown Ga 0.5In0.5P lattice matched to (001) GaAs is presented as a function of a wide range of V/III ratios and growth temperatures.
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Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

TL;DR: In this article, the properties of GaxIn1−xP grown by metalorganic vapor phase epitaxy at various V/III ratios and growth temperatures were studied by photoluminescence (PL) (300 K, 2 K), X-ray diffraction and Raman scattering measurements.
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Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy

TL;DR: In this article, the photoluminescence (PL)-peak energy anomaly problem for Ga0.5In 0.5P grown on GaAs by metalorganic vapor phase epitaxy was studied in detail.
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Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

TL;DR: In this paper, the first room-temperature continuous-wave (CW) operation of double-heterostructure visible semiconductor (VHSC) lasers has been achieved up to 50° C.
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Observation of a new ordered phase in Al x In 1-x As alloy and relation between ordering structure and surface reconstruction during molecular-beam-epitaxial growth

TL;DR: A new phase with spontaneous atomic ordering on the sublattice was found in this paper, where the surface reconstruction during growth is (2\ifmmode\times\else\texttimes\fi{}3) and a CuPt-type ordered phase was observed in crystals grown at higher temperatures.