There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

/pdf/gas-assisted-focused-electron-beam-and-ion-beam-processing-2wl9i66zrn.pdf

Gas-assisted focused electron beam and ion beam processing and fabrication

Nanofabrication of magnetic storage media, where servo marks, discrete tracks or individual islands are defined, offer the prospect for improved performance and increased areal density. However, this increase in performance will require that new and additional processes be introduced into disk manufacturing. We review here the fundamental patterning and fabrication processes that have been proposed, along with their respective strengths and weaknesses and the potential advantages they may offer for magnetic recording. The increase in data density afforded by nanofabrication may have added significance as more conventional approaches to ever increasing density will encounter physical limitations set by the thermal stability of the recorded bits.

https://iopscience.iop.org/article/10.1088/0022-3727/38/12/R01/pdf

Nanofabricated and self-assembled magnetic structures as data storage media

Nanosphere lithography (NSL) is an inexpensive, inherently parallel, high-throughput, and materials-general nanofabrication technique capable of producing well-ordered 2D periodic particle arrays of nanoparticles. This paper focuses on the synthesis of size-tunable silver nanoparticle arrays by nanosphere lithography and their structural characterization by atomic force microscopy (AFM). The in-plane diameter, a, of Ag nanoparticles was tuned from 21 to 126 nm by systematic variation of the nanosphere diameter, D. Similarly, the out-of-plane height, b, was tuned from 4 to 47 nm by varying the mass thickness, dm, of the Ag overlayer. Experimental measurements of a, b, and interparticle spacing dip of many individual nanoparticles as a function of D and dm were carried out using AFM. These studies show (i) b = dm, (ii) dip accurately corresponds to predictions based on the nanosphere mask geometry, (iii) a, after correction for AFM tip convolution, is governed only by the mask geometry and the standard devi...

Nanosphere Lithography: Size-Tunable Silver Nanoparticle and Surface Cluster Arrays

Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically less than about 475° C., and the annealing time is typically no more than about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

Plasma curing process for porous silica thin film

Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si-CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvements in elastic modulus is typically greater than or about 100 %, and more typically greater than or about 200 %. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350 °C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than or about 450 °C. The annealed, plasma cured film has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

Plasma curing of MSQ-based porous low-k film materials

A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant.

Method of doping semiconductors

Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Front end of line plasma mediated ashing processes and apparatus

Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Ivan Berry

Papers

Plasma curing process for porous silica thin film

Plasma curing of MSQ-based porous low-k film materials

Method of doping semiconductors

Front end of line plasma mediated ashing processes and apparatus

Ultraviolet assisted pore sealing of porous low k dielectric films