Patent
Front end of line plasma mediated ashing processes and apparatus
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TLDR
In this paper, a front end line (FEOL) plasma mediated ashing process for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresists, polymers and/or residues from the substrate.Abstract:
Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.read more
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References
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Patent
Inductive plasma reactor
TL;DR: In this article, a split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor, which may modulate the plasma potential.
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Plasma treatment system
TL;DR: In this paper, a plasminar treatment system for treating a workpiece with a downstream-type plasma is described. But the workpiece is held by a grounded plate, which is adapted with openings that remove electrons and ions from the plasma admitted from a plasma cavity into the processing space to provide a downstream type plasma of free radicals.
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ICP reactor having a conically-shaped plasma-generating section
TL;DR: In this article, an inductively-coupled plasma reactor was proposed for anisotropic or isotropic etching of a substrate, or chemical vapor deposition of a material onto a substrate.
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Bingxi Wood,Mark Kawaguchi,James S. Papanu,Roderick C. Mosely,Chiukun Steven Lai,Chien-Teh Kao,Hua Ai,Wei W Wang +7 more
TL;DR: In this paper, a substrate cleaning apparatus has a remote source to remotely energize a hydrogencontaining gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogencontaining species, the second ratio being different than the first ratio.
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Methods and apparatus for passivating a substrate in a plasma reactor
TL;DR: In this paper, the authors describe a plasma processing system configured for use in processing a substrate after metal etching, which includes a plasma generating region and a baffle plate disposed between the plasming region and the substrate.