I
Ivan L. Berry
Researcher at Lam Research
Publications - 31
Citations - 616
Ivan L. Berry is an academic researcher from Lam Research. The author has contributed to research in topics: Etching (microfabrication) & Substrate (printing). The author has an hindex of 11, co-authored 31 publications receiving 581 citations.
Papers
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Journal ArticleDOI
Predicting synergy in atomic layer etching
Keren J. Kanarik,Samantha Tan,Wenbing Yang,Taeseung Kim,Thorsten Lill,Alexander Kabansky,Eric Hudson,Tomihito Ohba,Kazuo Nojiri,Jengyi Yu,Rich Wise,Ivan L. Berry,Pan Yang,Jeffrey Marks,Richard A. Gottscho +14 more
TL;DR: In this paper, an anisotropic (anisotropic) plasma-enhanced approach was used for atomic layer etching of Si, Ge, C, W, GaN, and SiO2.
Patent
Selective nitride etch
Ivan L. Berry,Ivelin Angelov,Linda Marquez,Faisal Yaqoob,Pilyeon Park,Helen H. Zhu,Bayu Thedjoisworo,Zhao Li +7 more
TL;DR: In this article, a method for selectively etching silicon nitride is described, where the silicon oxide layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N 2 O) and oxygen (O 2 ) in a plasma.
Patent
Isotropic atomic layer etch for silicon oxides using no activation
TL;DR: In this paper, a method for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity is presented. But the method is self-limiting as once the activated surface is removed, etching stops since the fluorine species does not spontaneously react with the unactivated oxide surface.
Patent
Computer addressable plasma density modification for etch and deposition processes
TL;DR: In this paper, the authors present methods of modifying a reaction rate on a semiconductor substrate in a processing chamber which utilize a phased array of microwave antennas, such as energizing a plasma, emitting a beam of microwave radiation, and directing the beam into the plasma to cause a change in the reaction rate.
Patent
Ultraviolet curing process for porous low-k materials
Ralph Albano,Cory Bargeron,Ivan L. Berry,Jeff Bremmer,Orlando Escorcia,Qingyuan Han,Ari Margolis,Carlo Waldfried +7 more
TL;DR: In this paper, a post-UV treated, UV cured porous dielectric material has been presented, which has an improved elastic modulus of about 1.1 and about 3.5.