Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in exceptional detail. No other single volume treats this subject matter in such depth. From materials, fabrication, and analyses - to design, modeling, and physical, electrical, and thermal applications, this unique resource offers you complete coverage of the critical topics you need understand for your work in the field. Offering the most comprehensive, up-to-date body of knowledge on lumped elements, the book is an indispensable professional reference and serves as an excellent text for senior undergraduate and graduate-level courses in RF and microwave circuit design.

Lumped Elements for RF and Microwave Circuits

Preface. Microelectromechanical Systems (MEMS) and Radio Frequency MEMS. MEMS Materials and Fabrication Techniques. RF MEMS Switches and Micro Relays. MEMS Inductors and Capacitors. Micromachined RF Filters. Micromachined Phase Shifters. Micromachined Transmission Lines and Components. Micromachined Antennae. Integration and Packaging for RF MEMS Devices. Index.

RF MEMS and their applications

A wide-band physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations.

Frequency-independent equivalent-circuit model for on-chip spiral inductors

A wide-band, physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Using frequency-independent RLC elements, it accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. This new model is fully compatible with both AC and transient analysis. Verification with measurement data demonstrates excellent scalability for a wide range of inductor configurations.

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Frequency-independent equivalent circuit model for on-chip spiral inductors

The results of a comprehensive investigation into the characteristics and optimization of Inductors fabricated with the top-level metal of a submicron silicon VLSI process are presented. A computer program which extncts a physics-based model of microstrip components that is suitable for circuit (SPICE) simulation has been used to evaluate the effect of variations in melallization, layout geometry, and substrate parameters upon monolithic inductor performance. Three-dimensional (3-D) numerical simulations and experimental measurements of inductors were also used to benchmark the model aecuncy. It is shown in this work that low inductor Q is primarily due to the restrictions imposed by the thin interconnect metallization available in most very large scale integration (VLSI) technolocies, and that computer optimization of the inductor layout can be used to achieve a 50% improvement in component Q-factor over unoptimized designs.

The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC's

A frequency-dependent compact model for inductors in high ohmic substrates, which is based on an energy point-of-view, is developed. This approach enables the description of the most important coupling phenomena that take place inside the device. Magnetically induced losses are quite accurately calculated and coupling between electric and magnetic fields is given by means of a delay constant. The later coupling phenomenon provides a modified procedure for the computation of the fringing capacitance value, when the self-resonance frequency of the inductor is used as a fitting parameter. The model takes into account the width of every metal strip and the pitch between strips. This enables the description of optimized layout inductors. Data from experiments and electromagnetic simulators are presented to test the accuracy of the model.

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A physical frequency-dependent compact model for RF integrated inductors

This paper demonstrates the feasibility of a new circuit for the conversion of binary phase-shift keying signals into amplitude-shift keying signals. In its simplest form, the converter circuit is composed by a power divider, a couple of second harmonic injection-locked oscillators, and a power combiner. The operation of the converter circuit relies on the frequency synchronization of both oscillators and the generation of an interference pattern by combining their outputs, which reproduces the original phase modulation. Two prototypes of the converter have been implemented. The first one is a hybrid version working in the 400-530-MHz frequency range. The second one has been implemented using multichip-module technology, and is intended to work in the 1.8-2.2-GHz frequency range

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BPSK to ASK signal conversion using injection-locked oscillators-part II: experiment

This work presents an alternative to generate continuous phase shift of sinusoidal signals based on the use of super harmonic injection locked oscillators (ILO). The proposed circuit is a second harmonic ILO with varactor diodes as tuning elements. In the locking state, by changing the varactor bias, a phase shift instead of a frequency shift is observed at the oscillator output. By combining two of these circuits, relative phases up to /spl plusmn/90/spl deg/ could be achieved. Two prototypes of the circuit have been implemented and tested, a hybrid version working in the range of 200-300 MHz and a multichip module (MCM) version covering the 900-1000 MHz band.

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Continuous phase shift of sinusoidal signals using injection locked oscillators

This work presents a new circuit for the conversion of Binary Phase Shift Keying signals (BPSK) into Amplitude Shift Keying signals (ASK). The basic principles of the conversion method are the super harmonic injection of oscillator circuits and interference phenomena. The first one is used to synchronize the oscillators while the second is used to generate an amplitude interference pattern that reproduces the original phase modulation. When combined with an envelope detector, the proposed circuit allows the coherent demodulation of BPSK signals without the need of a carrier recovery system. Two prototypes of the converter have been implemented. The first one is a hybrid version working in the 300-400 MHz frequency range. The second has been implemented using Multi Chip Module (MCM) technology, and is intended for working in the range of 1.8-2.0 GHz. The time response of the converter to phase changes of the input signal is about 100 ns for the hybrid version and scales down to about 15 ns for the MCM version, giving upper limits for the modulation rate of about 5 Mbit/s and 30 Mbit/s, respectively.

BPSK to ASK converter for RF digital communications

An ab initio technique for the meshing of planar radiofrequency and microwave circuits is described in this work. It is based on the analytical study of the current crowding phenomena that takes place inside the component. By using the mutual coupling inductive terms between metal strips, the ratio of the AC resistance due to proximity effects over the DC resistance can be evaluated for each metal strip. In such evaluation, it is not required an explicit solution of currents and charges at any part of the circuit. Then, the number of mesh cells assigned to a given metal strip depends on the value of the ratio. This technique is applied to the computation of losses in high Q inductors implemented in a Low Temperature Co-fired Ceramics Technology.

J.A. Osorio

Papers

A physical frequency-dependent compact model for RF integrated inductors

BPSK to ASK signal conversion using injection-locked oscillators-part II: experiment

Continuous phase shift of sinusoidal signals using injection locked oscillators

BPSK to ASK converter for RF digital communications

Ab initio adaptive meshing for planar passive component modeling