J
J. Arout Chelvane
Researcher at Defence Metallurgical Research Laboratory
Publications - 133
Citations - 1248
J. Arout Chelvane is an academic researcher from Defence Metallurgical Research Laboratory. The author has contributed to research in topics: Magnetization & Magnetostriction. The author has an hindex of 15, co-authored 108 publications receiving 929 citations. Previous affiliations of J. Arout Chelvane include Moscow State University.
Papers
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Magnetoelectric properties of Gd and Nd-doped nickel ferrite
TL;DR: In this article, the properties of Gd and Nd-substituted nickel ferrite were investigated and the existence of the ferroelectricity was confirmed from the Ferroelectric loops and magnetocapacitance of −2% and −3% were observed.
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Magnetic and optical properties of Mn-doped BaSnO3
K. Balamurugan,N. Harish Kumar,B. Ramachandran,M. S. Ramachandra Rao,J. Arout Chelvane,P. N. Santhosh +5 more
TL;DR: In this paper, powder X-ray diffraction patterns of polycrystalline samples of BaSn1−xMnxO3 were found to be free of secondary phases using solid state reaction method.
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Effect of annealing on the microstructure and texture of cold rolled CrCoNi medium-entropy alloy
G. Dan Sathiaraj,Werner Skrotzki,Aurimas Pukenas,Rolf Schaarschuch,R. Jose Immanuel,Sushanta Kumar Panigrahi,J. Arout Chelvane,Sumit Kumar +7 more
TL;DR: The microstructure, texture and mechanical properties of medium-entropy ternary CrCoNi alloy after cold rolling and annealing were investigated in this paper, where the deformation texture is a ǫ-fibre with a spread between the Goss and Brass component.
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Mössbauer studies and enhanced electrical properties of R (R=Sm, Gd and Dy) doped Ni ferrite
TL;DR: In this article, structural, Mossbauer studies and improved electrical characteristics of Sm, Gd and Dy doped Ni ferrite materials in comparison to that of pure NiFe 2 O 4 are reported.
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Structural, magnetic and transport properties of half-metallic ferrimagnet Mn2VGa
TL;DR: In this article, the temperature variation of electrical resistance was found to follow the relation Rn=R0n+aTα (α=1.616) and (Rn-normalized electrical resistance) in the temperature range of 25-300 K and almost a temperature independent variation of the electrical resistance below 25-K indicating the absence of spin-flip scattering.