New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics

Revisiting MOSFET threshold voltage extraction methods

This paper presents a simple and successful method for evaluating the series resistance, the ideality factor, the saturation current and the shunt conductance in illuminated solar cells. The approach involves the use of an auxiliary function and a computer-fitting routine. The validity of this method has been confirmed by the way of current–voltage measurements of a commercial silicon solar cell, a module and a plastic solar cell.

Simple parameter extraction method for illuminated solar cells

Photovoltaic properties of NiPc/p-Si (organic/inorganic) heterojunctions

High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n≫2.0) in the prepared ZnO/diamond p–n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p–n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode.

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

A technique is proposed to extract the reverse saturation current parameter and ideality factor of semiconductor junctions from the low forward voltage region of the device’s characteristics. The method involves performing a mathematical operation on the experimental data that allows to calculate the parameters at values of forward current smaller than the reverse saturation current. The procedure was tested and its accuracy verified on synthetic I‐V characteristics, with and without added simulated experimental error or noise. Good agreement is obtained between the parameters used in modeling and the extracted values. The procedure was also applied to experimentally measured IB‐VBE characteristics of a real power BJT. # 1999 Elsevier Science Ltd. All rights reserved.

J.C. Ranuárez

Papers

Procedure for determining diode parameters at very low forward voltage

A new method to extract diode parameters under the presence of parasitic series and shunt resistance