Adelmo Ortiz-Conde

TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.

TL;DR: In this article, the intrinsic and extrinsic model parameters of illuminated solar cells containing parasitic series resistance and shunt conductance were extracted based on calculating the Co-content function (CC) from the exact explicit analytical solutions of the illuminated current-voltage (I-V) characteristics.

TL;DR: The anomalous leakage current I L in LPCVD polysilicon MOSFETs is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed.

TL;DR: An up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs, which includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSfETs.

TL;DR: In this paper, a new procedure is proposed to extract basic parameters for the AIM-Spice amorphous thin film transistor model in the above-threshold region, which avoids non-linear optimization.