Transparent heat regulating (THR) materials and coatings for energy saving window applications: Impact of materials design, micro-structural, and interface quality on the THR performance

Multilayer structures of TiO2/Ag/TiO2 have been deposited onto flexible substrates by room temperature sputtering to develop indium-free transparent composite electrodes. The effect of Ag thicknesses on optical and electrical properties and the mechanism of conduction have been discussed. The critical thickness (tc) of Ag mid-layer to form a continuous conducting layer is 9.5 nm and the multilayer has been optimized to obtain a sheet resistance of 5.7 Ω/sq and an average optical transmittance of 90% at 590 nm. The Haacke figure of merit (FOM) for tc has one of the highest FOMs with 61.4 × 10−3 Ω−1/sq.

High quality transparent TiO2/Ag/TiO2 composite electrode films deposited on flexible substrate at room temperature by sputtering

High-performance radiation stable ZnO/Ag/ZnO multilayer transparent conductive electrode

Optimization of SnO2/Ag/SnO2 tri-layer films as transparent composite electrode with high figure of merit

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

ZnO/Cu/ZnO multilayer structures with very high conductivity have been obtained by magnetron sputtering. The Hall resistivity of the films was as low as 6.9×10−5 Ω-cm with a carrier concentration of 1.2×1022 cm−3 at the optimum copper layer thickness. The conduction mechanism has been explained in terms of metal to oxide carrier injection at low copper thickness and metal layer conduction at higher Cu thicknesses. The peak transmittance of the films is 88% and the photopic averaged transmittance is 75%. Optical transmission behavior of the films involves absorption by copper due to d-band to Fermi-surface transitions at short wavelengths and reflectance combined with scattering losses at long wavelengths. A Burstein–Moss shift in the band gap of the films is seen to take place with increase in thickness of the copper layer. The Haacke figure of merit has been calculated for the films with the best value being 8.7×10−3 Ω−1. Pole figure results reveal that the copper midlayer acts as a hindrance to (002) Zn...

J. F. Moulder

Papers

The role of copper in ZnO/Cu/ZnO thin films for flexible electronics

Metallic conduction in ZnO/Cu/ZnO thin films