Showing papers by "J. Haba published in 1996"
Journal Article•
TL;DR: The incident angle dependence is obtained which agreed well with a Monte Carlo simulation and the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0/spl deg/ to 75/ spl deg/.
6 citations
02 Nov 1996
TL;DR: In this paper, the authors measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0/spl deg/ to 75 /spl deg)/ with a pitch of 250 /spl mu/m.
Abstract: As a part of R&D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0/spl deg/ to 75/spl deg/. These detectors have strips with pitches of 50, 125 and 250 /spl mu/m on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 /spl mu/m for normal incidence with a pitch of 50 /spl mu/m, and 29 /spl mu/m for incident angle of 75/spl deg/ with a pitch of 250 /spl mu/m.
6 citations
01 Dec 1996-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors developed a silicon micro strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, and made samples with different structures to optimize the width of implant strips, aluminum read-out strips, and/or the read out scheme among strips.
Abstract: For the development of the silicon micro strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips
4 citations
01 Dec 1996-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the load capacitance of a single-sided silicon microstrip detector with double-metal layers was studied and the measured capacitance was compared with the prediction of LEPSI-CRN model.
Abstract: The load capacitance of the single-sided silicon microstrip detector with double-metal layers was studied. In order to understand the capacitance due to the double-metal structure, we have fabricated single-sided microstrip detectors with different double-metal structure on the junction (p) side or the ohmic (n) side. The measured capacitance was compared with the prediction of LEPSI-CRN model.
1 citations
Journal Article•
TL;DR: A detector with small angle stereo readout for radiation induced type inversion of the bulk and micro strip detectors and front-end electronics designed for use at the LHC and employs a 1 bit binary scheme whereby only hits above a single threshold are recorded.
02 Nov 1996
TL;DR: Improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon are reported.
Abstract: The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N/sup +/ strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon.
Journal Article•
TL;DR: In this article, double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling current at the field-plate structure for the N/sup +/ strip, which represented a limitation to the biasing configuration.