J. K. Notthoff

Abstract: An integrated inverter stage operating in the gigabit range at a static power dissipation of 100 µW was built for future use in LSI logic circuits. Planar gallium arsenide technology was employed using selective ion-implanted enhancement mode junction field-effect transistors (E-JFET) having 3-µm gate lengths. A nine-stage ring oscillator served as a test vehicle to assess the speed-power product for digital applications. A theoretical analysis shows the transistor operates during the switching transient in the saturation regime, notwithstanding steady-state operation in the linear regime. When the transistor is switched off, the transient response is governed by the load resistance and the input capacitance of the subsequent stage. Means of reducing the switching time by increasing the supply voltage, nonlinear load devices, an output buffer stage, and reduction of gate length and width are described. Directly coupled E-JFET logic does not require level shifting, and, therefore, offers advantages over depletion-mode gallium arsenide MESFET logic by reducing the number of circuit elements per gate. Projected gallium arsenide E-JFET LSI logic circuits will surpass silicon-based bipolar logic with respect to both speed and power, and n-channel silicon MOS logic with respect to speed.

TL;DR: The degradation of the electrical characteristics of enhancement mode gallium arsenide junction field effect transistors exposed to fast neutrons (E > 10 keV) or to ionizing radiation (Co60) is shown substantially from changes in mobility and free carrier concentration.

TL;DR: In this article, the transient response of epitaxial n-channel GaAs junction field effect transistors (JFETs) to ionizing radiation has been investigated, and the authors were able to observe that the previously insulating substrate was contributing a diffusion component to the photocurrent.

TL;DR: In this article, a model in which superhot electrons from a region of many tens of microns are collected ballistically over the repulsive built-in P+ gate barrier of irradiated n−JFETs providing a gate current of polarity opposite to that of the ordinary junction photocurrent was proposed.