Advanced materials are essential to the quality of modern day life, but the synthesis of these compounds is often inefficient in terms of energy, time and resources; especially when considering the hydrothermal batch methods used to prepare many such compounds – often requiring week-long reaction times with variable yields and product quality. In contrast, Continuous flow synthesis (CFS) provides a more readily scalable means for the efficient, effective and reproducible synthesis of inorganic compounds. This publication demonstrates the novel CFS of several metal ammonium phosphates and compare the effect of synthesis route on particle size, size distribution, and crystallinity.

Genesis of Pure Se(0) Nano- and Micro- structures in Wastewater

The acid–base chemistry at the interface of zinc oxide (ZnO) and methylammonium lead tri-iodide (perovskite) leads to a proton transfer reaction that results in perovskite degradation. In perovskit...

Thermal Evaporation–Oxidation Deposited Aluminum Oxide as an Interfacial Modifier to Improve the Performance and Stability of Zinc Oxide-Based Planar Perovskite Solar Cells

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

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Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Capacitors: A Deliberate Insight Into State of Art and Future Prospects

Difficulties in Thin Film Synthesis

Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications

J.L. Fuentes Ríos

Papers

Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications