J
J-M. Fedeli
Researcher at Commissariat à l'énergie atomique et aux énergies alternatives
Publications - 259
Citations - 6361
J-M. Fedeli is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Silicon photonics & Silicon. The author has an hindex of 42, co-authored 253 publications receiving 6103 citations. Previous affiliations of J-M. Fedeli include Alcatel-Lucent & STMicroelectronics.
Papers
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Journal ArticleDOI
Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit.
J. Van Campenhout,P. Rojo Romeo,Philippe Regreny,Christian Seassal,D. Van Thourhout,Steven Verstuyft,L. Di Cioccio,J-M. Fedeli,C Lagahe,Roel Baets +9 more
TL;DR: Elect electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI).
Journal ArticleDOI
50-Gb/s Silicon Optical Modulator
David J. Thomson,Frederic Y. Gardes,J-M. Fedeli,Sanja Zlatanovic,Youfang Hu,Bill P.-P. Kuo,Evgeny Myslivets,Nikola Alic,Stojan Radic,Goran Z. Mashanovich,Graham T. Reed +10 more
TL;DR: In this paper, the authors presented the first optical modulation at 50 Gb/s with a 3.1dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer.
Journal ArticleDOI
High contrast 40Gbit/s optical modulation in silicon
David J. Thomson,Frederic Y. Gardes,Youfang Hu,Goran Z. Mashanovich,Maryse Fournier,Philippe Grosse,J-M. Fedeli,Graham T. Reed +7 more
TL;DR: In this article, a phase shifter with extinction ratios of up to 10dB and 3.5dB was demonstrated for 40Gbit/s with the same number of phase shifters.
Journal ArticleDOI
III-V/Si photonics by die-to-wafer bonding
Gunther Roelkens,J. Van Campenhout,Joost Brouckaert,D. Van Thourhout,Roel Baets,P. Rojo Romeo,Philippe Regreny,A. Kazmierczak,Christian Seassal,Xavier Letartre,G. Hollinger,J-M. Fedeli,L. Di Cioccio,Chrystelle Lagahe-Blanchard +13 more
TL;DR: In this article, the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process is presented.
Journal ArticleDOI
42.7 Gbit/s electro-optic modulator in silicon technology
Luca Alloatti,Dietmar Korn,Robert Palmer,David Hillerkuss,Jingshi Li,Anna Barklund,Raluca Dinu,J. Wieland,Maryse Fournier,J-M. Fedeli,Hui Yu,Wim Bogaerts,Pieter Dumon,Roel Baets,Christian Koos,Wolfgang Freude,Juerg Leuthold +16 more
TL;DR: A highly conductive electron accumulation layer which is induced by an external DC "gate" voltage is introduced and demonstrated for the first time data encoding with an SOH electro-optic modulator.