J
J. N. Kuznia
Publications - 42
Citations - 4968
J. N. Kuznia is an academic researcher. The author has contributed to research in topics: Chemical vapor deposition & Photoluminescence. The author has an hindex of 30, co-authored 42 publications receiving 4820 citations.
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High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
TL;DR: In this article, the authors report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n−GaN−Al0.86N heterojunction.
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High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
TL;DR: In this article, a photoconductive ultraviolet detector based on insulating single-crystal GaN was constructed using a switched atomic-layer-epitaxy process, which exhibited a linear behavior over five orders of incident optical power, thereby implying a very large dynamic range for these GaN-based ultraviolet sensors.
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Metal semiconductor field effect transistor based on single crystal GaN
TL;DR: In this article, the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN was reported and the GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition.
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Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
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Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition.
Evan R. Glaser,T. A. Kennedy,K. Doverspike,Larry B. Rowland,D. K. Gaskill,Jaime A. Freitas,M. Asif Khan,D. T. Olson,J. N. Kuznia,D. K. Wickenden +9 more
TL;DR: In this paper, a set of GaN epitaxial layers grown by organometallic chemical-vapor deposition were investigated and both undoped and Mg-doped GaN films were studied from three laboratories to obtain general trends and behavior.