Chemical vapour deposition of coatings

The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.

Metalorganic chemical vapor deposition of III‐V semiconductors

A comprehensive model for graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) Al/sub x/Ga/sub 1-x/As diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain-vs.-current density data for different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, and the high-gain kink in T/sub 0/ versus temperature is qualitatively explained. >

A model for GRIN-SCH-SQW diode lasers

Wear resistance investigation of titanium nitride-based coatings

High purity GaAs prepared from trimethylgallium and arsine

http://jes.ecsdl.org/content/126/7/1134.full.pdf

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

In this chapter we review some of the major practical situations in which low pressure is used during the growth of semiconducting materials by chemical vapor deposition. Growth at subatmospheric pressure offers significant advantages for silicon grown from silane, and for the 111- V compounds InP, GaAs, GalnAs, and GalnAsP grown from organometallic sources by vapor phase epitaxy (OM-VPE). To understand the effect of pressure on growth it is necessary to have at least a qualitative knowledge of the physical and chemical processes involved in chemical vapor deposition (CVD). We therefore present a model of growth and of impurity incorporation that was initially developed for silicon growth but has since been applied, with some success, to the growth of compound semiconductors by OM- VPE. For each semiconduc­ tor we consider the practical growth system and then describe the material characteristics and applications in state-of-the-art devices.

Low-pressure chemical vapor deposition

We describe the characteristics of graded‐index separate‐confinement heterostructure (GRIN‐SCH) quantum well laser structures for a wide range of quantum well thickness and graded layer composition. It was deduced that the ‘‘GRIN’’ region enhances carrier confinement and assists the thermalization of carriers into the quantum well. A maximum value of T0 of 190 K was measured for these single quantum well lasers.

J.P. Duchemin

Papers

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

Low-pressure chemical vapor deposition

Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure

A new method for the growth of GaAs epilayer at low H2 pressure

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications