Journal ArticleDOI
A new method for the growth of GaAs epilayer at low H2 pressure
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TLDR
In this article, a method of growing thin GaAs epitaxial layers has been perfected by working under low hydrogen pressure, and good quality microwave components have been realized with the layers obtained by this technique.About:
This article is published in Journal of Crystal Growth.The article was published on 1978-12-01. It has received 69 citations till now. The article focuses on the topics: Atmospheric pressure & Torr.read more
Citations
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Chemical vapour deposition of coatings
TL;DR: Chemical Vapour Deposition (CVD) involves the chemical reactions of gaseous reactants on or near the vicinity of a heated substrate surface as mentioned in this paper, which can provide highly pure materials with structural control at atomic or nanometer scale level.
Journal ArticleDOI
High purity GaAs prepared from trimethylgallium and arsine
TL;DR: In this paper, a study of the sources and control of residual impurities in GaAs grown by metalorganic chemical vapor deposition (MOCVD) is presented, and the effects of source purity, growth temperature, and reactor pressure upon residual impurity incorporation are detailed.
Journal ArticleDOI
Selective growth of GaAs in the MOMBE and MOCVD systems
H. Heinecke,A. Brauers,F. Grafahrend,C. Plass,N. Pütz,K. Werner,Markus Weyers,Hans Lüth,P. Balk +8 more
TL;DR: In this paper, a comprehensive study of selective epitaxial deposition of GaAs on partly masked GaAs substrates using TMG or TEG and AsH3 in H2 (MOCVD) at 5X102 to 105 Pa total pressure, and in an ultra high vacuum apparatus without carrier gas (MOMBE).
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Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
TL;DR: In this paper, the effects of starting materials quality and growth parameters were investigated in an attempt to obtain high-purity GaAs epilayers for microwave device applications by a (CH3)3Ga/AsH3 MOCVD technique.
References
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Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
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The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
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The preparation of high purity gallium arsenide by vapour phase epitaxial growth
J.R. Knight,D. Effer,P.R. Evans +2 more
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Kinetics of Silicon Growth under Low Hydrogen Pressure
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Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
TL;DR: In this paper, the Schottky barrier field effect transistors (FET) were constructed using trimethyl gallium and arsine and the best n-type material had a room temperature mobility of 6260 cm2 sec−1 V−1.
Related Papers (5)
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more