Localized surface plasmon resonance (LSPR) spectroscopy of metallic nanoparticles is a powerful technique for chemical and biological sensing experiments. Moreover, the LSPR is responsible for the electromagnetic-field enhancement that leads to surface-enhanced Raman scattering (SERS) and other surface-enhanced spectroscopic processes. This review describes recent fundamental spectroscopic studies that reveal key relationships governing the LSPR spectral location and its sensitivity to the local environment, including nanoparticle shape and size. We also describe studies on the distance dependence of the enhanced electromagnetic field and the relationship between the plasmon resonance and the Raman excitation energy. Lastly, we introduce a new form of LSPR spectroscopy, involving the coupling between nanoparticle plasmon resonances and adsorbate molecular resonances. The results from these fundamental studies guide the design of new sensing experiments, illustrated through applications in which researchers use both LSPR wavelength-shift sensing and SERS to detect molecules of chemical and biological relevance.

https://www.photonics.ethz.ch/fileadmin/user_upload/Courses/NanoOptics/willets.pdf

Localized Surface Plasmon Resonance Spectroscopy and Sensing

Atomic layer deposition: an overview.

Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

The Interaction of Water with Solid Surfaces: Fundamental Aspects Revisited

Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al(CH3)3 (trimethylaluminum [TMA]) and H2O. Low-temperature Al2O3 ALD films have the potential to coat thermally fragile substrates such as organic, polymeric, or biological materials. The properties of low-temperature Al2O3 ALD films were investigated versus growth temperature by depositing films on Si(100) substrates and quartz crystal microbalance (QCM) sensors. Al2O3 film thicknesses, growth rates, densities, and optical properties were determined using surface profilometry, atomic force microscopy (AFM), QCM, and spectroscopic ellipsometry. Al2O3 film densities were lower at lower deposition temperatures. Al2O3 ALD film densities were 3.0 g/cm3 at 177 °C and 2.5 g/cm3 at 33 °C. AFM images showed that Al2O3 ALD films grown at low temperatures were very smooth with a root-mean-squared (RMS) roughness of only 4 ± 1 A. Current−voltage and capacitance−voltage...

Low-Temperature Al2O3 Atomic Layer Deposition

Atomic layer controlled film growth is an important technological and scientific goal that is closely tied to many issues in surface chemistry. This article first reviews the basic concepts of atomic layer growth using molecular precursors and binary reaction sequence chemistry. Many examples are given for the various films that have been grown using this atomic layer growth technique. The paradigms for atomic layer epitaxy (ALE) and atomic layer processing (ALP) are then discussed in terms of self-limiting surface reactions. Recent investigations of the surface chemistry of SiO2 and Al2O3 ALP and GaAs ALE are examined and used to illustrate the possible mechanisms of atomic layer growth. Subsequently, the characteristics of film deposition using atomic layer growth techniques are explored using recent examples for Al2O3 ALP. The structure of the deposited films is also reviewed using results from previous Al2O3 deposition investigations. This article then concludes by discussing possible complications to...

Surface Chemistry for Atomic Layer Growth

Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions

Films of silicon dioxide (SiO2) were deposited at room temperature by means of catalyzed binary reaction sequence chemistry. The binary reaction SiCl4 + 2H2O --> SiO2 + 4HCl was separated into SiCl4 and H2O half-reactions, and the half-reactions were then performed in an ABAB ellipsis sequence and catalyzed with pyridine. The pyridine catalyst lowered the deposition temperature from >600 to 300 kelvin and reduced the reactant flux required for complete reactions from approximately 10(9) to approximately 10(4) Langmuirs. Growth rates of approximately 2.1 angstroms per AB reaction cycle were obtained at room temperature for reactant pressures of 15 millitorr and 60-second exposure times with 200 millitorr of pyridine. This catalytic technique may be general and should facilitate the chemical vapor deposition of other oxide and nitride materials.

https://science.sciencemag.org/content/sci/278/5345/1934.full.pdf

J. W. Klaus

Papers

Surface Chemistry for Atomic Layer Growth

Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions

Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions