Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

Phase-change materials for rewriteable data storage

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Phase Change Memory

The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance, and yield characteristics. They introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. Challenges for the technology are addressed, including the design of PCM cells for low reset current, the need to control device-to-device variability, and undesirable changes in the phase change material that c...

Phase change memory technology

Materials whose optical properties can be reconfigured are crucial for photonic applications such as optical memories. Phase-change materials offer such utility and here recent progress is reviewed. Phase-change materials (PCMs) provide a unique combination of properties. On transformation from the amorphous to crystalline state, their optical properties change drastically. Short optical or electrical pulses can be utilized to switch between these states, making PCMs attractive for photonic applications. We review recent developments in PCMs and evaluate the potential for all-photonic memories. Towards this goal, the progress and existing challenges to realize waveguides with stepwise adjustable transmission are presented. Colour-rendering and nanopixel displays form another interesting application. Finally, nanophotonic applications based on plasmonic nanostructures are introduced. They provide reconfigurable, non-volatile functionality enabling manipulation and control of light. Requirements and perspectives to successfully implement PCMs in emerging areas of photonics are discussed.

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Phase-change materials for non-volatile photonic applications

Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.

https://science.sciencemag.org/content/sci/336/6088/1566.full.pdf

Breaking the Speed Limits of Phase-Change Memory

The laser‐induced crystallization behavior of GeTe‐based amorphous alloy thin films has been quantitatively studied by local reflection measurements with a focused 780 nm laser. The use of multiple laser pulse sequences enables the nucleation rate and crystal‐growth speed to be separately deduced, allowing the compositional variation of both these processes to be followed. This not only gives detailed information on the crystallization mechanism, but also allows the fine tuning of phase change alloy compositions for use in erasable optical recording. The differences between the as‐deposited and melt‐quenched amorphous phases are also discussed. In particular, it is shown that the crystallization speed of the as‐deposited layer can differ by over an order of magnitude from that of the melt‐quenched amorphous layer. The as‐deposited state can, however, be transformed into a modified amorphous state equivalent to that obtained by melt quenching a previously crystalline layer. This allows the determination of...

Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth

The laser‐induced crystallization behavior of GeTe‐based amorphous alloys has been measured with a novel multipulse laser technique. This enables the composition dependence of the nucleation rate and crystal growth speed to be independently followed. Two types of crystallization are investigated. The first involves single‐phase crystallization of quaternary alloys based on Ge39Sb9Te52, in which the composition dependence of nucleation and growth is followed as Se, S, Sn, and Si are included. Both the nucleation rate and crystal‐growth speed vary exponentially with the composition, and a correlation is found between crystallization behavior and bond strengths. The second involves multiphase crystallization in the GeSbTe ternary system. It is shown that the observed variations in crystallization behavior primarily arise from the composition dependence of nucleation rather than crystal growth. The implications of this finding for the importance of long range diffusion during crystallization in the GeSbTe system are discussed.

Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth

The disclosed information reading system comprises a record carrier (1) having at least two parallel tracks (2a, 2b) whose mutual distance is so small that the radiation beam (10) is modulated by the information patterns of the two tracks (2a, 2b) when the tracks are scanned by a focused radiation beam (10) along a line (18) indicating the center between the tracks (2a, 2b). The tracks comprise elementary areas, with the positions of the boundaries (80) of the elementary areas of the two tracks, viewed in the track direction, corresponding to each other. The information patterns in the tracks comprise elementary areas occupied by a mark and unoccupied elementary areas. The occupied elementary areas have a different influence on the radiation than the unoccupied elementary areas. When the two tracks (2a, 2b) are scanned, the center (17) of the scanning spot (14) is directed onto a line (18) which is located centrally between the tracks (2a, 2b). A radiation beam modulated by the scanned information pattern is projected onto a detection system (12). The information (I1, I2, I) which has been read is at least partly derived on the basis of one or more detection signals (Vt, Vppr, Vppt, Vppd) which are supplied by the detection system (12) at the instants when the radiation beam passes the boundaries (80) of the elementary areas.

Information reading system and record carrier and reading device for use in such a system

A description is given of an reversible optical information medium comprising a substrate (1), a first dielectric layer (2), a phase-change recording layer on the basis of Ge-Sb-Te (3), a second dielectric layer (4), and a metal mirror layer (5). The recording layer (3) comprises an alloy having the composition Ge50x Sb40-40x Te60-10x, in atom %, wherein 0.166≦x≦0.444 and wherein the layer thickness d3 of said recording layer (3) ranges between 25 and 35 nm. Such a medium is suitable for high speed recording (i.e. at least twice the CD-speed), and has a large cyclability of at least 105 direct overwrite cycles.

Reversible optical information medium

A method is described for recording an optical information carrier, in which marks representing recorded data are written at different writing speeds by radiation pulse of equal length and power, independent of the writing speed. The number of pulses per unit length of the written mark is a constant independent of the writing speed.

Method and device for recording a mark having a substantially constant number of pulses per unit length independent of writing speed on an optical information carrier

James Howard Coombs

Papers

Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth

Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth

Information reading system and record carrier and reading device for use in such a system

Reversible optical information medium

Method and device for recording a mark having a substantially constant number of pulses per unit length independent of writing speed on an optical information carrier