J
James R. Sheats
Researcher at Agilent Technologies
Publications - 45
Citations - 2239
James R. Sheats is an academic researcher from Agilent Technologies. The author has contributed to research in topics: Layer (electronics) & OLED. The author has an hindex of 16, co-authored 45 publications receiving 2203 citations. Previous affiliations of James R. Sheats include Avago Technologies & Hewlett-Packard.
Papers
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Journal ArticleDOI
Organic Electroluminescent Devices
James R. Sheats,Homer Antoniadis,Mark R. Hueschen,William Leonard,Jeffrey N. Miller,Ron Moon,Daniel B. Roitman,Andrew Stocking +7 more
TL;DR: In this article, a brief review of device principles and applications requirements and focus on the understanding of reliability issues is provided, focusing on the reliability issues that govern the lifetime of a flat panel display.
Journal ArticleDOI
Formation and growth of black spots in organic light‐emitting diodes
J. McElvain,Homer Antoniadis,Mark R. Hueschen,Jeffrey N. Miller,D. M. Roitman,James R. Sheats,R. L. Moon +6 more
TL;DR: In this paper, electroluminescence (EL) degradation studies of thin-film organic light-emitting diodes under ambient conditions were performed via EL and photoluminecence (PL) microscopy.
Patent
Transparent, flexible permeability barrier for organic electroluminescent devices
James R. Sheats,Mark R. Hueschen,Karen L. Seaward,Daniel B. Roitman,Andrew Davidson Bridge George +4 more
TL;DR: In this paper, a barrier for preventing water or oxygen from a source thereof from reaching a device that is sensitive to water and oxygen is constructed by depositing a first polymer layer between the device and the source.
Journal ArticleDOI
Failure modes in polymer-based light-emitting diodes
TL;DR: In this article, the authors review what has been learned about how to achieve these lifetimes, and consider what must still be done in order to extend them, including formation of nonemissive spots due to cathode reaction, photooxidation in air, anode reactions, shorts and current leakage due to film defects and ion migration in strong fields.