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Jan Haschke

Researcher at École Polytechnique Fédérale de Lausanne

Publications -  62
Citations -  2041

Jan Haschke is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 22, co-authored 62 publications receiving 1666 citations. Previous affiliations of Jan Haschke include Fraunhofer Society & Helmholtz-Zentrum Berlin.

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Investigation of selective junctions using a newly developed tunnel current model for solar cell applications

TL;DR: In this paper, the tunnel-interlayer is modeled as a "membrane" which modifies the current at the semiconductor/tunnel layer interface, without the need of inserting an additional insulator layer.
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23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact

TL;DR: In this paper, the influence of the MoOx and intrinsic a-Si:H thicknesses on current-voltage properties and discuss transport and performance-loss mechanisms is discussed. But the authors focus on the front-side hole-selective layer.
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Polycrystalline silicon thin-film solar cells: Status and perspectives

TL;DR: In this paper, the status of poly-Si thin-film solar cell concepts is summarized by comparing the technological fabrication methods, as well as the structural and electrical properties and solar cell performances of the respective materials.
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Silicon heterojunction solar cells: Recent technological development and practical aspects - from lab to industry

TL;DR: In this article, the authors review the recent progress of silicon heterojunction (SHJ) solar cells and emphasize the importance of minimised recombination, not only to reach high open-circuit voltages, but also high fill-factor.
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Towards wafer quality crystalline silicon thin-film solar cells on glass

TL;DR: In this article, the electron-beam induced liquid phase crystallization (LPC) process was used to obtain high quality crystalline silicon thin film solar cells on glass, which achieved stable efficiencies of 11.5% and open-circuit voltages well above 600mV with a maximum value of 656mV.