Jan Willem Maes

TL;DR: In this article, a silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses, and a carbon precursor gas is also flowed into the reaction chamber during introduction of the trisileane and/or during introducing reactive nitrogen.

TL;DR: This study resulted in the identification of polyethylene glycol (PEG400), propylene glycol, and methanol as solvents that were relatively well-tolerated over a range of developmental stages and showed that acetone was well-Tolerated by embryos but not by larvae, and 1% cyclodextrin (HPBCD), indicating the utility of this carrier for compound screening in zebrafish.

TL;DR: In this article, methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or borane agent are provided, where the process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemicals are incorporated into the thin film, and a third source chemical is a Silane or Borane that at least partially reduces oxidized portions of the titanium

TL;DR: In this paper, an integrated circuit structure on a semiconductor substrate comprises depositing a high k gate dielectric material over the substrate using an atomic layer deposition process, and a silicon oxide capping layer is deposited over the gate in a rapid thermal chemical vapor deposition process.

TL;DR: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source as discussed by the authors, where the reactionant may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides.