scispace - formally typeset
J

Jani Päiväsaari

Researcher at Helsinki University of Technology

Publications -  15
Citations -  1000

Jani Päiväsaari is an academic researcher from Helsinki University of Technology. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 11, co-authored 15 publications receiving 955 citations. Previous affiliations of Jani Päiväsaari include Aalto University.

Papers
More filters
Journal ArticleDOI

Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

TL;DR: Ninisto et al. as discussed by the authors described the current state of the atomic layer deposition (ALD) technique for producing high-quality thin layers with the focus on oxide materials such as ZrO2 and other rare earth oxides, SnO2, ZnO for high-k dielectrics, gas sensors and various optoelectronic applications.
Journal ArticleDOI

A comparative study on lanthanide oxide thin films grown by atomic layer deposition

TL;DR: In this article, Lanthanide oxide (Ln 2 O 3 ) thin films were grown onto silicon (100) substrates by atomic layer deposition (ALD) using volatile β-diketonate-type Ln(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) compounds and ozone as precursors.
Journal ArticleDOI

Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors

TL;DR: In this paper, Er 2 O 3 thin films were grown onto Si(1 0 0) and soda lime glass substrates by atomic layer deposition (ALD) from Er(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone precursors.
Journal ArticleDOI

Cerium dioxide buffer layers at low temperature by atomic layer deposition

TL;DR: In this article, thin films of cerium dioxide were deposited by atomic layer deposition (ALD) and temperature ranges were studied in detail were 175-375 °C and 225-350 °C for the Ce(thd)4 precursors, respectively.
Journal ArticleDOI

Synthesis, structure and properties of volatile lanthanide complexes containing amidinate ligands: application for Er2O3 thin film growth by atomic layer deposition

TL;DR: In this article, anhydrous rare earth chlorides were treated with three equivalents of lithium 1,3-di-tert-butylacetamidinate (prepared in situ from the di-, methyllithium and methynithium) in tetrahydrofuran at ambient temperature.