scispace - formally typeset
J

Jari Koskinen

Researcher at Aalto University

Publications -  164
Citations -  4164

Jari Koskinen is an academic researcher from Aalto University. The author has contributed to research in topics: Amorphous carbon & Thin film. The author has an hindex of 32, co-authored 161 publications receiving 3587 citations. Previous affiliations of Jari Koskinen include Cornell University & University of Helsinki.

Papers
More filters
Journal ArticleDOI

The influence of carbon based coatings and surface finish on the tribological performance in high-load contacts

TL;DR: In this paper, the effect of surface finish with two types of carbon based coatings was evaluated in rolling contact twin disc tests, where the surface finish grades represented the ground surface, and two polished surfaces providing average surface roughness values of Ra 0.128 and 0.030 µm.
Journal ArticleDOI

Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

TL;DR: Amorphous carbon (a-C) films with varying oxygen content were deposited by closed-field unbalanced magnetron sputtering with the aim to understand the effect of oxygen on the structural and physical properties of the films and subsequently correlate these changes with electrochemical properties as mentioned in this paper.
Journal ArticleDOI

Electrochemical detection of hydrogen peroxide on platinum-containing tetrahedral amorphous carbon sensors and evaluation of their biofouling properties

TL;DR: It is proposed that combining ta-C with Pt results in good electrocatalytic activity towards H2O2 oxidation with better tolerance towards aqueous environment mimicking physiological conditions compared to pure Pt.
Journal ArticleDOI

Low friction ta-C films with hydrogen reservoirs

TL;DR: In this paper, a diamond-like tetrahedral amorphous carbon (Ta-C) films were modified by adding hydrogen to the films and the results indicated that the lowered co-efficient of friction is a result of hydrogen transport to the contact surfaces with the aid of surface diffusion through the pinholes of the ta-C layer.