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Design Of Analog Cmos Integrated Circuits

Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

Design of Nanostructured Solar Cells Using Coupled Optical and Electrical Modeling Michael G. Deceglie † , Vivian E. Ferry ‡ , A. Paul Alivisatos ‡ , and Harry A. Atwater* ,† Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States Abstract: Nanostructured light trapping has emerged as a promising route toward improved efficiency in solar cells. We use coupled optical and electrical modeling to guide optimization of such nanostructures. We study thin-film n-i-p a-Si:H devices and demonstrate that nanostructures can be tailored to minimize absorption in the doped a-Si:H, improving carrier collection efficiency. This suggests a method for device optimization in which optical design not only maximizes absorption, but also ensures resulting carriers are efficiently collected. Keywords: Thin film solar cells, plasmon, nanophotonic, light trapping, simulation, device physics, silicon, photovoltaics In order to maximize solar cell efficiency, it is necessary to optimize both the electrical device physics and the optical absorption of the device. Typically, these two problems are treated separately,

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Design of Nanostructured Solar Cells Using Coupled Optical and Electrical Modeling - eScholarship

In this paper, we have investigated device reliability by studying the impact of interface traps, both donor (positive interface charges) and acceptor (negative interface charges), present at the Si/SiO2 interface, on analog/RF performance and linearity distortion analysis of heterogeneous-gate-dielectric gate-all-around tunnel FET (HD-GAA-TFET), which is used to enhance the tunneling current of TFET. Various figures of merit such as cutoff frequency $f_{{T}}$ , maximum oscillation frequency $f_{\max}$ , transconductance frequency product, higher order transconductance coefficients $({g}_{{m}1}, {g}_{{m}3})$ , VIP2, VIP3, IIP3, IMD3, zero crossover point, and 1-dB compression point have been investigated, and the results obtained are simultaneously compared with a gate-all-around TFET (GAA-TFET). Simulation results indicate that HD-GAA-TFET is more immune toward the interface trap charges present at the Si/SiO2 interface than the GAA TFET and hence can act as a better candidate for low power switching applications. All simulations have been done on an ATLAS device simulator.

Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell

Thin-film solar cells are widely used nowadays to minimize the cost of the device. CZTSSe (copper zinc tin sulfide selenide) is a thin film material used in solar cells due to its high absorption coefficient, greater stability and cheaper production process. However, the achieved efficiency of CZTSSe based solar cell is only ~12%. The surface recombination at the back contact is one of the major hindrances in these devices. Therefore, in this work, to minimize the back-surface recombination, the back-surface field (BSF) layers are introduced. In this regard, SnS (tin sulfide) and Sn2S3 (tin (IV) sulfide) are used as BSF. Further, to analyze the impact of BSF, a comparative study between conventional and BSF layer-based devices has also been done. The results show a rise in the efficiency from 12.57% to 16.34% and 12.57% to 17.04% with the introduction of SnS and Sn2S3 based BSF layers, respectively. The improvement is attributed to the reduction in the recombination of carriers at the back surface of the device. It has been observed that the device with the BSF layer of Sn2S3, the maximum open-circuit voltage (Voc) is 0.59V, short circuit current density (Jsc) is 37.68 mA/cm−2 and fill factor (FF) is 76.46%. All the simulation results are validated using energy band diagram (EBD) of the devices.

Influence of SnS and Sn 2 S 3 based BSF layers on the performance of CZTSSe solar cell

In this work, AlGaN/GaN HEMT device performance for different dielectrics as surface passivation have been studied. Due to the high thermal stability, high dielectric constant and high reliability of HfO 2 but limiting interface quality, a stack of silicon nitride with hafnium dioxide has been proposed as surface passivation material for AlGaN/GaN HEMT, attributed to the good interface of Si 3 N 4 with GaN. The device performance of AlGaN/GaN HEMTs with various dielectrics i.e. SiO 2 , Si 3 N 4 , Al 2 O 3 and a stack of Si 3 N 4 /HfO 2 as surface passivation layer (SPL) have also been compared using device simulator. Evaluated electrical parameters show that the device passivated with a stack of Si 3 N 4 /HfO 2 shows high drain current, high breakdown voltage, higher gain as well as higher current switching ratio in comparison with other dielectric materials used as surface passivation, thus the results indicate that the AlGaN/GaN HEMT with stack (Si 3 N 4 /HfO 2 ) surface passivation has better device performance suitable for high-power applications.

Analysis of Varied Dielectrics as Surface Passivation on AlGaN/GaN HEMT for Analog Applications

This work aims at demonstrating the superiority of a Germanium (Ge) source Double Gate Tunnel Field Effect Transistor (DG-TFET) as compared to a conventional Silicon (Si) source DG-TFET in terms of improved analog characteristics. In particular, the influence of Interface Trap Charges (ITC) present at the dielectric semiconductor interface on the reliability of the device is investigated. In addition, a Gate Material Engineered (GME) Ge source DG-TFET is proposed to improve the device reliability through a modification of the flatband voltage of the device near the source channel junction. A comparative analysis of the influence of ITC on a Ge source DG-TFET and a Ge source DG-TFET with Gate Material Engineering (GME) reveals superior device reliability with the amalgamation of GME onto Ge source DG-TFET.

Gate metal engineered heterojunction DG-TFETs for superior analog performance and enhanced device reliability

This work reports an n+ source pocket doped PIN gate all around tunnel FET (PNIN-GAA-TFET) with Palladium as a catalytic metal gate for hydrogen detection. The basis of sensing of H 2 molecules is the dissociation of H 2 into Hydrogen atoms followed by their diffusion into the Palladium (Pd) gate leading to formation of a dipole layer due to the polarization of H atoms at the Pd-SiO 2 interface. It is analyzed that the sensitivity of GAA-TFET based H 2 gas sensor is appreciably enhanced by many orders with the integration of n+ source pocket at the tunneling junction. Moreover, for evaluating the stability of the sensor, the performance of the sensor is analyzed at ambient temperatures other than the room temperature. Results reveal that the PNIN-GAA-TFET based H 2 gas sensor is practically stable for the range of ±100K w.r.t. 300K. It is examined that for the entire pressure range the sensitivity of PNIN-GAA-TFET based H 2 gas sensor is maximum at the room temperature.

Jaya Madan

Papers

Influence of SnS and Sn 2 S 3 based BSF layers on the performance of CZTSSe solar cell

Analysis of Varied Dielectrics as Surface Passivation on AlGaN/GaN HEMT for Analog Applications

Gate metal engineered heterojunction DG-TFETs for superior analog performance and enhanced device reliability

PNIN-GAA-tunnel FET with palladium catalytic metal gate as a highly sensitive hydrogen gas sensor

Comprehensive device simulation of 16.9% efficient two-terminal PbS–PbS CQD tandem solar cell