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Design Of Analog Cmos Integrated Circuits

Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

Design of Nanostructured Solar Cells Using Coupled Optical and Electrical Modeling Michael G. Deceglie † , Vivian E. Ferry ‡ , A. Paul Alivisatos ‡ , and Harry A. Atwater* ,† Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States Abstract: Nanostructured light trapping has emerged as a promising route toward improved efficiency in solar cells. We use coupled optical and electrical modeling to guide optimization of such nanostructures. We study thin-film n-i-p a-Si:H devices and demonstrate that nanostructures can be tailored to minimize absorption in the doped a-Si:H, improving carrier collection efficiency. This suggests a method for device optimization in which optical design not only maximizes absorption, but also ensures resulting carriers are efficiently collected. Keywords: Thin film solar cells, plasmon, nanophotonic, light trapping, simulation, device physics, silicon, photovoltaics In order to maximize solar cell efficiency, it is necessary to optimize both the electrical device physics and the optical absorption of the device. Typically, these two problems are treated separately,

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Design of Nanostructured Solar Cells Using Coupled Optical and Electrical Modeling - eScholarship

In this paper, we have investigated device reliability by studying the impact of interface traps, both donor (positive interface charges) and acceptor (negative interface charges), present at the Si/SiO2 interface, on analog/RF performance and linearity distortion analysis of heterogeneous-gate-dielectric gate-all-around tunnel FET (HD-GAA-TFET), which is used to enhance the tunneling current of TFET. Various figures of merit such as cutoff frequency $f_{{T}}$ , maximum oscillation frequency $f_{\max}$ , transconductance frequency product, higher order transconductance coefficients $({g}_{{m}1}, {g}_{{m}3})$ , VIP2, VIP3, IIP3, IMD3, zero crossover point, and 1-dB compression point have been investigated, and the results obtained are simultaneously compared with a gate-all-around TFET (GAA-TFET). Simulation results indicate that HD-GAA-TFET is more immune toward the interface trap charges present at the Si/SiO2 interface than the GAA TFET and hence can act as a better candidate for low power switching applications. All simulations have been done on an ATLAS device simulator.

Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell

A methodical survey on present state of art for electrostatically-doped tunnel FETs and its future prospects

Tunnel field effect transistors (TFETs) have proved themselves as a better choice for the replacement of MOSFET due to provision of scalability and possibility of better realization of goal to achieve subthreshold swing less than 60 mV/decade. Challenge of lower ON current in conventional TFET has been overcome by a heterojunction double-gate (DG) TFET structure in which a low bandgap material, magnesium silicide (Mg2Si) is implemented as source region. There is dire need to determine the reliability of such device under various constraints to optimize them for low-power and high-speed applications. Therefore, in this paper, authors examine the device reliability by investigating the analog/RF performance of Mg2Si source heterojunction double-gate TFET (MSH-DG-TFET) under the influence of interface trap charge polarity and density. This reliability analysis is accomplished by including the effect of trap charges (both positive interface charges, i.e., donors and negative interface charges, i.e., acceptors) at Si/SiO2 interface. Presence of these trapped acceptor and donor charges at Si/SiO2 interface modifies the flat-band voltage which in turn alters the performance of the device. It is revealed that for positive trap charge density of 1 × 1012 cm−2, the leakage current or off-state current of MSH-DG-TFET drastically increases from an order of 10–18 to 10–14 A/µm, thus degrading the performance. Further, presence of negative trap charges at interface tends to enhance the flat-band voltage that translates to the higher gate bias to turn the device ON. Results reveal that impact of positive interface charges is more pernicious on the device performance as compared to the negative interface charges. Thus, MSH-DG-TFET is susceptible to the donor traps existing at Si/SiO2 in comparison with the acceptor traps. Studies carried out may prove to be very useful for future research work in suggesting better TFET structures comprising of Mg2Si as source.

Impact of interfacial charges on analog and RF performance of Mg2Si source heterojunction double-gate tunnel field effect transistor

This paper analyses the performance of n+ source pocket PIN gate all around tunnel field effect transistor (PNIN-GAA-TFET) at radio frequency over a wide range of temperatures. The results are compared with the conventional counterpart i.e. GAA-TFET. It is examined that by amalgamating an n+ source pocket at the tunneling junction on GAA-TFET, various RF performance metrics such as current gain, unilateral power gain, maximum stable power gain (G MS ), maximum available power gain (G MA ), maximum transducer power gain (G MT ) and admittance parameters have been considerably enhanced. Additionally, the temperature affectability over the various power gains, cut off frequency and maximum oscillations frequency reveals only a slight enhancement at elevated temperatures. Moreover, manifolds increase in cut-off frequency (f T ) and the maximum oscillation frequency (f MAX ) is acquired for PNIN-GAA-TFET in comparison to GAA-TFET. Thus, the analyzed results offer the opportunity for realizing the stability of PNIN-GAA-TFET for high-performance RF Wireless communication applications over a wide range of temperatures.

Influence of temperature variations on radio frequency performance of PNIN gate all around tunnel-FET

High thermalization losses associated with the single junction based solar cells demand the investigation of multilayer junction solar cell. Multilayer junction solar cell which comprises of top cell (high bandgap)/bottom cell (low bandgap) efficiently utilizes the solar spectrum. Perovskite/Si based tandem solar cells often require thick (>100 µm) and high quality (large lifetime) Si wafer-based bottom subcell, which eventually increases overall module cost. In this work, relatively a much thinner layer of magnesium silicide (Mg 2 Si) of thickness 2µm is used to propose a novel perovskite/Mg 2 Si based tandem solar cell. Proposed device exhibits open circuit voltage (V OC ) = 1.67 V, short circuit current density (J SC ) = 19.9 mA. cm-2, fill factor (FF) = 76 % and power conversion efficiency (PCE) of 25.5%. The results suggest the Mg 2 Si as an optimum choice with the band gap of 0.77 eV for the bottom cell of the tandem solar cell.

Design and Simulation of Novel Perovskite/Mg 2 Si Based Monolithic Tandem Solar Cell With 25.5% Conversion Efficiency

The performance of the organic and inorganic halide perovskite solar cells (PSCs) has been improved rapidly in the last few years. In literature maximum PSCs are based on lead (Pb) based perovskite (CH 3 NH 3 PbI 3 ) and such PSCs have reflected record conversion efficiency of 25.2% in the year 2020. PSCs own some unique properties like excellent optical absorption, bandgap tunability and low fabrication cost. This makes hybrid PSCs most promising for photovoltaic (PV) industry by means of performance with power conversion efficiency (PCE). We in this work report the simulation study on a low bandgap (1.2eV) mixed Sn (50%) and Pb (50%) halide (MAPb 0.5 Sn 0.5 I 3 ) PSC structure. Initially a device with the combination of C 60 (Buckminsterfullerene) and IC 60 BA (Indene-C 60 Bisadduct) as electron transport layer (ETL) and PEDOT: PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) as hole transport layer (HTL) respectively is calibrated. Thereafter, the analysis has been performed by using different set of HTLs like PEDOT: PSS, P3HT, Cu 2 O and Spiro-OMeTAD in which highest PCE of 13.57% is achieved with C 60 & IC 60 BA (ETL) and PEDOT: PSS (HTL). Followed by ETLs (mp-TiO 2 and CdS) variation which reflected the highest PCE (18.82%) with mp-TiO 2 (ETL) and PEDOT: PSS (HTL). The results are further summarized in terms of absorber layer thickness variation from 50 nm to 300 nm at the optimized ETL (mp-TiO 2 ) and HTL (PEDOT: PSS) material. The exercise carried out in this work showed optimized conversion efficiency of 19.21%. Work reported in these studies may open up the window for the development of low lead content perovskite based high efficiency PSCs.

Jaya Madan

Papers

A methodical survey on present state of art for electrostatically-doped tunnel FETs and its future prospects

Impact of interfacial charges on analog and RF performance of Mg2Si source heterojunction double-gate tunnel field effect transistor

Influence of temperature variations on radio frequency performance of PNIN gate all around tunnel-FET

Design and Simulation of Novel Perovskite/Mg 2 Si Based Monolithic Tandem Solar Cell With 25.5% Conversion Efficiency

Optimization of Mixed Sn and Pb Perovskite Solar Cell in Terms of Transport Layers and Absorber Layer Thickness Variation