Showing papers by "Jean Massies published in 1982"
TL;DR: In this paper, the epitaxial growth of Ag on GaAs{001} layers prepared by molecular beam epitaxy (MBE) is reported and different experimental approaches are used in order to provide various experimental results on the main metallurgical aspects of this type of growth which are interface related: epitaxia relationships, mode of growth and interfacial diffusion.
43 citations
TL;DR: In this article, the orientation of Al and Ag layers grown by MBE onto GaAs{001} surfaces was investigated and the observed crystallographic relationships have been found to depend only on the growth temperature in the case of Ag, while for Al the situation is more complex.
35 citations
TL;DR: In this article, tunnel currents have been measured and compared to theoretical calculations based on WKB approximation for GaAs-Al 0.5Ga0.5As-GaAs tunnel diodes.
Abstract: GaAs-Al0.5Ga0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.
27 citations
TL;DR: In this article, the epitaxial relationship between silver and GaAs{001} together with the mode of metal growth and the interfacial diffusion were mainly determined by low energy electron diffraction, Auger electron spectroscopy (AES) and scanning electron microscopy.
25 citations
TL;DR: In this article, the authors measured the Hall mobilities of thin epitaxial layers of Ga0.47In0.53As and showed that the peak mobility of undoped layers lies between 35000 and 40000 cm2V?1s?1 in the dark and increases up to 45000 cm 2V? 1s? 1 when measured in the light.
Abstract: Thin epitaxial layers (< 1.5 ?m) of Ga0.47In0.53As were grown by molecular beam epitaxy, very closely lattice-matched to InP, despite a nonrotating substrate holder. Hall mobilities were measured as a function of temperature in the dark and on illumination. At low temperature, the peak mobility of undoped layers lies between 35000 and 40000 cm2V?1s?1 in the dark and increases up to 45000 cm2V?1s?1 when measured in the light. Preliminary results obtained on slightly Sn-doped layers are also reported.
18 citations
TL;DR: In this article, anisothropic mosaic spread δe in (110) and (001) GaAs was found for both GaAs and GaAs, and a clear correlation was established between Δφ and ǫ.
4 citations
TL;DR: In this paper, the authors report on the Ag M4,5N4, 5N 4, 5 N 4, 4,5 Auger lineshape variation which occurs during the epitaxial growth of Ag onto GaAs { 001 } layers grown in situ by MBE (molecular beam epitaxy).
Abstract: We report on the Ag M4,5N4,5N4,5 Auger lineshape variation which occurs during the epitaxial growth of Ag onto GaAs { 001 } layers grown in situ by MBE (molecular beam epitaxy). This variation depends strongly on the mode of growth of the metallic layer. We suggest that it is due to a solid-state effect which acts progressively in the case of a layer-by-layer (2 D) growth and more rapidly when the growth involves the formation of 3 D clusters. J. Physique 43 (1982) 939-944 JUIN 1982,