Showing papers in "Thin Solid Films in 1982"
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TL;DR: In this article, the connection between microstructure and absolute limits to the allowed values of the dielectric response of two-phase composites is reviewed and a solution of the Clausius-Mossotti problem is developed from basic principles.
1,433 citations
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TL;DR: In this paper, the failure of a ZrO2-8%Y2O3/Ni-14% Al-0.1% Zr coating system on Rene 41 in Mach 0.3 burner rig tests was characterized.
335 citations
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TL;DR: In this article, the optical and electrical properties of these layers are very similar: for thicknesses in the range of a few hundred nanometers, a resistivity ϱ of the order of 4 × 10−4 Ω cm and a transparency T of 80%-90% in the visible range of the spectrum are obtained.
243 citations
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TL;DR: In this paper, the state of the art in preparing and investigating hard i-C films is discussed in the context of new experimental results, and the results of electron diffraction analysis and electron energy loss spectrometry in conjunction with the relatively low mass density of the films suggest a structural model consisting of puckered n-fold carbon rings.
234 citations
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TL;DR: In this article, the structural, electrical and EL properties of vacuum-deposited anthracene films through which large steady state current densities can be passed at rather low applied voltages were reported.
197 citations
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IBM1
TL;DR: The use of a diffusion barrier layer in the contact structure, which prevents metallurgical reactions as well as diffusion between the silicon or silicide and the contact metal, is the most common approach to achieve stable and reliable contacts.
180 citations
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TL;DR: In this paper, the role of ions in film formation is discussed under three headings: the effect of inert gas ion bombardment after or during film formation, the impact of the kinetic energy of source material ions, and the effect effect of the charges of the ions.
172 citations
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167 citations
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TL;DR: The barrier height of TiN on n-type silicon was found to be 0.49 V, allowing the fabrication of low barrier Schottky diodes on high resistivity material and good ohmic contacts to low resistivity n- and p-type material as discussed by the authors.
149 citations
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TL;DR: In this article, the reorientation of crystallites in vapour-deposited thin metal films under ion bombardment and texture formation induced by ion beams during vacuum condensation are surveyed.
147 citations
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TL;DR: In this article, the currentvoltage characteristics of Ag2Se/Se/M thin film sandwiches were studied as functions of the shapes of the electrodes, which were either symmetrical or asymmetrical, as well as their composition (M is a metal (gold, chromium or silver) or Ag 2Se).
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TL;DR: In this article, the texture and growth patterns of sputtered MoS 2 films deposited onto substrates were identified from the textures and growth pattern of the surface microcrystallites, and the change in optical properties was explained.
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TL;DR: In this paper, the authors show that the interfaces between lamellae consist of regions of perfect contact and regions in which there are gaps of 0.01-0.1 μm which probably arise from adsorbed or entrapped gas between impinging droplets and previously solidified material.
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TL;DR: In this paper, the effects of donor impurities such as antimony, fluorine and antimony plus fluorine on the structural, electrical and optical properties of tin oxide films prepared by spray pyrolysis have been studied.
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TL;DR: In this article, a reactive bias sputtering process in a double-cathode arrangement of a given geometry with an essential bias power load to the substrates is described. And the principles of a high throughput production plant with typical cycle times of approximately 60 min are demostrated.
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TL;DR: In this paper, amorphous hydrogenated carbon (a-C:H) films have been deposited by the d.c. magnetron sputtering in an ArC2H2 plasma of a metal cathode overcoated with carbon.
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TL;DR: In this paper, the influence of electrically active n-type (75As) and p-type impurities on the solid phase epitaxial regrowth of ion-implanted amorphized Si and Ge was studied for low temperature furnace annealing.
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TL;DR: In this article, the composition of the TiN films was measured using Rutherford backscattering analysis and the influence of substrate bias on the grain size, lattice parameter, the deposition rate, the resistivity and the temperature coefficient of resistivity was also examined.
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TL;DR: In this article, the role of silicon in scale formation and scale maintenance on refractory metals and high temperature alloys is discussed and various coating concepts are discussed ranging from brittle silicide coatings to modified MCrAl-Y overlayers and composite structures with dispersed silicide reservoirs in ductile matrices.
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TL;DR: In this article, a very low absorption coefficient (less than 103 cm-1) for the Ta2O5 films below their fundamental absorption edge (hv < 4.2 eV) is obtained from reflectance and transmittance spectra of TaO5 deposited onto quartz substrates.
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TL;DR: In this paper, the effects of ion-solid interaction offer specific possibilities for the preparation and modification of thin solid films, and some aspects of elementary mechanisms, in particular atomic mixing and the role of thermal spikes, are discussed.
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TL;DR: In this article, the optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition, and it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600-800°C, 800°C and 500-600°C respectively.
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TL;DR: In this article, the dielectric function and the dynamic resistivity were determined from the optical spectra of a SnO 2 film for heat-reflecting purposes on borosilicate glass by hot spray technique from an aerosol of SnCl 4 in butyl acetate doped with fluorine.
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TL;DR: In this paper, the authors outline a theretical analysis of the required radiative properties and report some small-scale experiments using evaporated SiO and “Si 3 N 4 ” films.
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TL;DR: In this article, an upper layer of Co3O4 and subsequent layers of CoO down to the substrate were used for spray pyrolysis on stainless steel substrates kept at 300°C.
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TL;DR: In this paper, a two-stage process was used to make thin CuInS2 films via molecular beam deposition and subsequent anneal in a sulphur-containing atmosphere.
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TL;DR: In this article, the feasibility of preparing a thin film ZnO/CuInSe2 heterojunction solar cell using the spray pyrolysis technique is demonstrated. But the quality of the films requires improvement for a high efficiency cell.
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TL;DR: Transparent and heat-reflecting indium tin oxide films were prepared by electron beam evaporation of In 2 O 3 9mol%SnO 2 in an oxygen atmosphere of about 5×10 −4 Torr as discussed by the authors.
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TL;DR: In this paper, the performance of laser-glazed zirconia (containing 8 wt.% Y 2 O 3 ) thermal barrier coatings was evaluated in cyclic oxidation and cyclic corrosion tests.
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TL;DR: A review of existing theories of the formation of Schottky barriers is presented in this article, which includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments, and the central role of interface states and their different physical origins are assessed.