Jean Nguyen

TL;DR: In this paper, a 10 μm cutoff superlattice device based on a complementary barrier infrared detector (CBIRD) was proposed to increase the collection efficiency of photo-generated carriers and reduce dark current generation without impeding photocurrent flow.

TL;DR: In this paper, the advantages of the III-V material system in the context of large format infrared FPAs are discussed, and the first demonstration of the megapixelsimultaneously-readable and pixel-co-registered dual-band QWIP FPA is presented, along with the first mid-wave and long-wave 1Kx1K superlattice FPA.

TL;DR: In this article, the authors provide a brief overview of recent progress in III-V semiconductor infrared photodetectors resulting from advances in infrared detector materials, including type-II superlattices (T2SL) and InAsSb alloy, and the unipolar detector architecture.

TL;DR: In this article, a 10 μm cutoff device based on a complementary barrier infrared detector (CBIRD) design is presented, which achieves high performance long wavelength InAs/GaSb superlattice infrared photodetectors based on the BIRD architecture.

TL;DR: In this paper, the concept of submonolayer quantum dot infrared photodetector (SML QDIP) was described and experimental device results on long-wavelength infrared detection, and imaging results from a mega-pixel focal plane arrays.