MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.

RF MEMS switches and switch circuits

Reconfigurable antennas, with the ability to radiate more than one pattern at different frequencies and polarizations, are necessary in modern telecommunication systems. The requirements for increased functionality (e.g., direction finding, beam steering, radar, control, and command) within a confined volume place a greater burden on today's transmitting and receiving systems. Reconfigurable antennas are a solution to this problem. This paper discusses the different reconfigurable components that can be used in an antenna to modify its structure and function. These reconfiguration techniques are either based on the integration of radio-frequency microelectromechanical systems (RF-MEMS), PIN diodes, varactors, photoconductive elements, or on the physical alteration of the antenna radiating structure, or on the use of smart materials such as ferrites and liquid crystals. Various activation mechanisms that can be used in each different reconfigurable implementation to achieve optimum performance are presented and discussed. Several examples of reconfigurable antennas for both terrestrial and space applications are highlighted, such as cognitive radio, multiple-input-multiple-output (MIMO) systems, and satellite communication.

Reconfigurable Antennas for Wireless and Space Applications

This paper reviews the recent progress in MEMS for radio frequency (RF) applications from a device perspective. RF MEMS devices reviewed include switches and relays, tunable capacitors, integrated inductors, mechanical resonators and filters, and some representative microwave and millimetre-wave components. Important device parameters are highlighted, as they have significant contributions to the performance of the final products in which the devices are used. The challenges and statuses of these RF MEMS devices are outlined and discussed. The intent of this topical review is to provide perspective to newcomers in the field, and empower potential end-users with an overall device picture, current status, and a vision of their ultimate performance capabilities.

/pdf/rf-mems-from-a-device-perspective-34wvbgeq8p.pdf

RF MEMS from a device perspective

In this paper, a closed-form expression for the pull-in voltage of fixed–fixed beams and fixed–free beams is derived starting from the known expression of a simple lumped spring-mass system. The effects of partial electrode configuration, of axial stress, non-linear stiffening, charge re-distribution and fringing fields are all included in the final expression. Further, the results obtained are summarized and validated with other existing empirical and analytical models as well as with finite element simulation results. The model agrees well with finite element simulation results obtained with COVENTORWARE software.

https://iopscience.iop.org/article/10.1088/0960-1317/12/4/319/pdf

Pull-in voltage analysis of electrostatically actuated beam structures with fixed–fixed and fixed–free end conditions

In this paper the design of a compact, efficient and electronically tunable antenna is presented. A single-fed resonant slot loaded with a series of PIN diode switches constitute the fundamental structure of the antenna. The antenna tuning is realized by changing its effective electrical length, which is controlled by the bias voltages of the solid state shunt switches along the slot antenna. Although the design is based on a resonant configuration, an effective bandwidth of 1.7:1 is obtained through this tuning without requiring a reconfigurable matching network. Four resonant frequencies from 540-890 MHz are selected in this bandwidth and very good matching is achieved for all resonant frequencies. Theoretical and experimental behavior of the antenna parameters is presented and it is demonstrated that the radiation pattern, efficiency and polarization state of the antenna remain essentially unaffected by the frequency tuning

/pdf/design-of-reconfigurable-slot-antennas-2w7eqkp5uk.pdf

Design of reconfigurable slot antennas

This paper, the first of two parts, presents an electromagnetic model for membrane microelectromechanical systems (MEMS) shunt switches for microwave/millimeter-wave applications. The up-state capacitance can be accurately modeled using three-dimensional static solvers, and full-wave solvers are used to predict the current distribution and inductance of the switch. The loss in the up-state position is equivalent to the coplanar waveguide line loss and is 0.01-0.02 dB at 10-30 GHz for a 2-/spl mu/m-thick Au MEMS shunt switch. It is seen that the capacitance, inductance, and series resistance can be accurately extracted from DC-40 GHz S-parameter measurements. It is also shown that dramatic increase in the down-state isolation (20/sup +/ dB) can be achieved with the choice of the correct LC series resonant frequency of the switch. In part 2 of this paper, the equivalent capacitor-inductor-resistor model is used in the design of tuned high isolation switches at 10 and 30 GHz.

High-isolation CPW MEMS shunt switches. 1. Modeling

For pt.1 see ibid., vol.48, no.6, p.1045-1052 (2000). In this paper, the second of two parts, the equivalent RLC model of the shunt switch is used in the design of tuned two- and four-bridge "cross" switches from 10 to 40 GHz. The cross switch attained an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a down-state isolation of 45-50 dB with only 1.5 pF of down-state capacitance (C/sub d/). Also, an X-band microelectromechanical system (MEMS) switch with an insertion loss of less than 0.2 dB and an isolation of 35 dB is presented. This is done by inductively tuning the LC series resonance of the shunt switch. The MEMS bridge height is 1.5-2.5 /spl mu/m, resulting in a pull-down voltage of 15-25 V. Application areas are in low-loss high-isolation communication and radar.

High-isolation CPW MEMS shunt switches. 2. Design

We present an accurate model of the switching mechanism of MEMS switches. The model is based on a electro-mechanical analysis which takes into account the varying force and damping versus position (time). The model also calculates the switching current taking into account both the capacitance change and the voltage change versus time. The model accurately predicts the switching time, the switching current, the velocity versus position (and time) of the MEMS bridge, and the energy consumed in the switching process. It is found that the current can be very large and the total switching energy is larger than predicted by simple models due to the damping underneath the MEMS bridge.

Nonlinear electro-mechanical modeling of MEMS switches

This paper presents a novel all-metal series switch with several different pull-down electrode geometries. The switch results in an up-state capacitance of 5-9 fF and an isolation of -25 to -30 d8 at 10 GHz. The fabrication process is completely compatible with the standard capacitive (or dc-contact) shunt switch, A dc-30 GHz series/shunt switch is also presented with an isolation of -60 dB at 5 GHz and -42 dB at 10 GHz. This is the highest isolation switch available to-date. The performance is limited by radiation in the CPW lines and not by the series/shunt switch characteristics. The application areas are in high-isolation switches for basestations and satellite systems.

Jeremy B. Muldavin

Papers

RF MEMS switches and switch circuits

High-isolation CPW MEMS shunt switches. 1. Modeling

High-isolation CPW MEMS shunt switches. 2. Design

Nonlinear electro-mechanical modeling of MEMS switches

All-metal high-isolation series and series/shunt MEMS switches