Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 1. Modeling
TLDR
In this article, an electromagnetic model for membrane microelectromechanical systems (MEMS) shunt switches for microwave/millimeter-wave applications is presented, where the up-state capacitance can be accurately modeled using three-dimensional static solvers and full-wave solvers are used to predict the current distribution and inductance of the switch.Abstract:
This paper, the first of two parts, presents an electromagnetic model for membrane microelectromechanical systems (MEMS) shunt switches for microwave/millimeter-wave applications. The up-state capacitance can be accurately modeled using three-dimensional static solvers, and full-wave solvers are used to predict the current distribution and inductance of the switch. The loss in the up-state position is equivalent to the coplanar waveguide line loss and is 0.01-0.02 dB at 10-30 GHz for a 2-/spl mu/m-thick Au MEMS shunt switch. It is seen that the capacitance, inductance, and series resistance can be accurately extracted from DC-40 GHz S-parameter measurements. It is also shown that dramatic increase in the down-state isolation (20/sup +/ dB) can be achieved with the choice of the correct LC series resonant frequency of the switch. In part 2 of this paper, the equivalent capacitor-inductor-resistor model is used in the design of tuned high isolation switches at 10 and 30 GHz.read more
Citations
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Journal ArticleDOI
Pull-in voltage analysis of electrostatically actuated beam structures with fixed–fixed and fixed–free end conditions
TL;DR: In this article, a closed-form expression for the pull-in voltage of fixed-fixed beams and fixed-free beams is derived starting from the known expression of a simple lumped spring-mass system.
Journal ArticleDOI
Design of reconfigurable slot antennas
TL;DR: In this article, a single-fed resonant slot loaded with a series of PIN diode switches constitutes the fundamental structure of the antenna and the antenna tuning is realized by changing its effective electrical length, which is controlled by the bias voltages of the solid state shunt switches along the slot antenna.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Journal ArticleDOI
Electromechanical considerations in developing low-voltage RF MEMS switches
TL;DR: In this article, the design, fabrication, and testing of a low-actuation voltage Microelectromechanical systems (MEMS) switch for high-frequency applications is described.
Journal ArticleDOI
MEMS for wireless communications: 'from RF-MEMS components to RF-MEMS-SiP'
TL;DR: In this article, the progress in RF-MEMS from a device and integration perspective is reviewed, and the worldwide state-of-the-art of RFMEMS devices including switches, variable capacitors, resonators and filters are described.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
Distributed MEMS true-time delay phase shifters and wide-band switches
S. Barker,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, a coplanar waveguide (CPW) transmission line with fixed-fixed beam MEMS bridge capacitors placed periodically over the transmission line, thus creating a slow-wave structure was designed.
Proceedings ArticleDOI
A Surface Micromachined Miniature Switch For Telecommunications Applications With Signal Frequencies From DC Up To 4 Ghz
J.J. Yao,M.F. Chang +1 more
TL;DR: In this paper, a surface micromachined miniature switch has been made on a semi-insulating GaAs substrate using a suspended silicon dioxide micro-beam as the cantilevered arm, a platinum-to-gold electrical contact, and electrostatic actuation as the switching mechanism.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Proceedings ArticleDOI
Squeeze-film damping in solid-state accelerometers
TL;DR: In this paper, a finite-element technique is presented that essentially solves Reynold's equation for small displacements and squeeze numbers by analogy with heat conduction in a solid with internal heat generation.