There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.

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Multiferroic and magnetoelectric materials

Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.

Boron nitride substrates for high-quality graphene electronics

Electronic topological states of matter exhibit novel types of responses to electromagnetic fields. The response of strong topological insulators, for instance, is characterized by a so-called axion term in the electromagnetic Lagrangian which is ultimately due to the presence of topological surface states. Here we develop the axion Mie theory for the electromagnetic response of spherical particles including arbitrary sources of fields, i.e., charge and current distributions. We derive an axion induced mixing of transverse magnetic and transverse electric modes which are experimentally detectable through small induced rotations of the field vectors. Our results extend upon previous analyses of the problem. Our main focus is on the experimentally relevant problem of electron energy loss spectroscopy in topological insulators, a technique that has so far not yet been used to detect the axion electromagnetic response in these materials.

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Axion Mie Theory of Electron Energy Loss Spectroscopy in Topological Insulators

We map the problem of the orbital excitation (orbiton) in a 2D antiferromagnetic and ferroorbital ground state onto a problem of a hole in 2D antiferromagnet. The orbiton turns out to be coupled to magnons and can only be mobile on a strongly renormalized scale by dressing with magnetic excitations. We show that this leads to a dispersion relation reflecting the two-site unit cell of the antiferromagnetic background, in contrast to the predictions based on a mean-field approximation and linear orbital-wave theory.

https://iopscience.iop.org/article/10.1088/1742-6596/391/1/012168/pdf

Dispersion of orbital excitations in 2D quantum antiferromagnets

Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin Nernst effect (SNE), the thermoelectrical counterpart of the SHE, has attracted much interest. Empirically strong SHEs and SNEs are associated with $d$-band compounds, such as transition metals and their alloys -- the largest spin Hall conductivity (SHC) in a $p$-band material is $\sim 450$ $\left(\hbar/e\right)\left(\Omega\cdot cm\right)^{-1}$ for a Bi-Sb alloy, which is only about a fifth of platinum. This raises the question whether either the SHE and SNE are naturally suppressed in $p$-bands compounds, or favourable $p$-band systems were just not identified yet. Here we consider the $p$-band semimetal InBi, and predict it has a record SHC $\sigma_{xy}^{z}\approx 1100 \ \left(\hbar/e\right)\left(\Omega\cdot cm\right)^{-1}$ which is due to the presence of nodal-lines in its band structure. Also the spin-Nernst conductivity $\alpha_{zx}^y\approx 1.2 \ (\hbar/e)(A/m\cdot K)$ is very large, but our analysis shows its origin is different as the maximum appears in a different tensor element. This insight gained on InBi provides guiding principles to obtain a strong SHE and SNE in $p$-band materials and establishes a more comprehensive understanding of the relationship between the SHE and SNE.

Strong spin-Hall and Nernst effects in a p-band semimetal

Aristotle attributes in De Anima the first discussion on magnetism to Thales of Miletus, who lived in Asia Minor, present-day Turkey, at around 600 BC. It is remarkable that despite its ancient roots, research on magnetism and magnetic materials has remained a pillar of condensed matter physics and materials science, and continues to go from strength to strength. Other scientific ideas pioneered by Thales of Miletus, such as his cosmological thesis which held that the world started from water, have gained considerably less momentum.

Magnetic Resonant Inelastic X-ray Scattering

The exactly solvable Kitaev model on the honeycomb lattice has recently received enormous attention linked to the hope of achieving novel spin-liquid states with fractionalized Majorana-like excitations. In this review, we analyze the mechanism proposed by G. Jackeli and G. Khaliullin to identify Kitaev materials based on spin-orbital dependent bond interactions and provide a comprehensive overview of its implications in real materials. We set the focus on experimental results and current theoretical understanding of planar honeycomb systems (Na$_2$IrO$_3$, $\alpha$-Li$_2$IrO$_3$, and $\alpha$-RuCl$_3$), three-dimensional Kitaev materials ($\beta$- and $\gamma$-Li$_2$IrO$_3$), and other potential candidates, completing the review with the list of open questions awaiting new insights.

Jeroen van den Brink

Papers

Axion Mie Theory of Electron Energy Loss Spectroscopy in Topological Insulators

Dispersion of orbital excitations in 2D quantum antiferromagnets

Strong spin-Hall and Nernst effects in a p-band semimetal

Magnetic Resonant Inelastic X-ray Scattering

Models and Materials for Generalized Kitaev Magnetism