J
Jerome Cheron
Researcher at National Institute of Standards and Technology
Publications - 30
Citations - 188
Jerome Cheron is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Amplifier & Transistor. The author has an hindex of 6, co-authored 26 publications receiving 146 citations. Previous affiliations of Jerome Cheron include University of Limoges & University of Colorado Boulder.
Papers
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Journal ArticleDOI
Measurement Challenges for 5G and Beyond: An Update from the National Institute of Standards and Technology
Kate A. Remley,Joshua A. Gordon,David R. Novotny,Alexandra E. Curtin,Christopher L. Holloway,Matthew T. Simons,Robert D. Horansky,Michael S. Allman,Damir Senic,Maria Becker,Jeffrey A. Jargon,Paul D. Hale,Dylan F. Williams,Ari Feldman,Jerome Cheron,Richard A. Chamberlin,Camillo Gentile,Jelena Senic,Ruoyu Sun,Peter B. Papazian,Jeanne T. Quimby,Mohit S. Mujumdar,Nada Golmie +22 more
TL;DR: In this paper, the authors proposed the use of alternatives to current wireless technologies, including multiple-input/multiple-output (MIMO) antenna arrays that allow increased simultaneous transmission capacity; the millimeter-wave (mmW) spectrum (30-300 GHz) to alleviate the spectrum crunch in current frequency bands; and ultradense networks transmitting wide-band modulated signals to allow short-range, high-speed data transfer.
Proceedings ArticleDOI
Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band
Jerome Cheron,Michel Campovecchio,Denis Barataud,Tibault Reveyrand,Michel Stanislawiak,Philippe Eudeline,Didier Floriot +6 more
TL;DR: In this paper, an internally matched packaged GaN HEMT for achieving not only high efficiency and high power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band is presented.
Proceedings ArticleDOI
High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Jerome Cheron,Michel Campovecchio,Raymond Quéré,Dirk Schwantuschke,Rudiger Quay,Oliver Ambacher +5 more
TL;DR: In this paper, two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-band frequencies are reported in order to ensure high output power and high gain.
Proceedings ArticleDOI
High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Jerome Cheron,Michel Campovecchio,Raymond Quéré,Dirk Schwantuschke,Rudiger Quay,Oliver Ambacher +5 more
TL;DR: In this article, three power amplifier MMICs at Ka-band frequencies are reported, and they are realized using AlGaN/GaN HEMTs with a gate length of 100 nm.
Proceedings Article
Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band
Jerome Cheron,M. Campovecchio,Denis Barataud,Tibault Reveyrand,Michel Stanislawiak,Philippe Eudeline,Didier Floriot,Wilfried Demenitroux +7 more
TL;DR: This method allows the designer to synthesize the external output matching of the packaged transistor only at the fundamental frequencies without imposing constraints on the 2nd harmonic loads.