Substrate-integrated waveguide (SIW) technology represents an emerging and very promising candidate for the development of circuits and components operating in the microwave and millimetre-wave region. SIW structures are generally fabricated by using two rows of conducting cylinders or slots embedded in a dielectric substrate that connects two parallel metal plates, and permit the implementation of classical rectangular waveguide components in planar form, along with printed circuitry, active devices and antennas. This study aims to provide an overview of the recent advances in the modelling, design and technological implementation of SIW structures and components.

Review of substrate-integrated waveguide circuits and antennas

Preface. Introduction, Fundamental Concepts, and Definitions. Solid-State Device Modeling. Harmonic-Balance analysis. Volterra-Series and Power-Series Analysis. Balanced Circuits. Diode Mixers. Diode Frequency Multipliers. Small-Signal Amplifiers. Power Amplifiers. Active Frequency Multipliers. Active Mixers. Oscillators. Index.

Nonlinear Microwave and RF Circuits

In this paper, we relate the error vector magnitude (EVM) bit error rate (BER) and signal to noise ratio (SNR). We also present the fact that with such relationship it would be possible to predict or in cases substitute EVM in places of BER or even SNR. In doing so, we first define EVM with normalization so that the definition stands for multi-modulation systems, viz. binary phas shift keying (BPSK), quadrature phase shift keying (QPSK) etc. We also compare among the different performance metrics and show that EVM can be equivalently useful as signal to noise ratio and bit error rate. The relationships are based on stream based communication systems. A few Monte Carlo simulations are carried out to illustrate the performance of EVM based on these relationships.

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On the Extended Relationships Among EVM, BER and SNR as Performance Metrics

Preparing the books to read every day is enjoyable for many people. However, there are still many people who also don't like reading. This is a problem. But, when you can support others to start reading, it will be better. One of the books that can be recommended for new readers is computer aided analysis of electronic circuits algorithms and computational techniques. This book is not kind of difficult book to read. It can be read and understand by the new readers.

Computer-aided analysis of electronic circuits: Algorithms and computational techniques

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/. Damaging the crystal has a strong influence on /spl alpha/, /spl alpha/ may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The /spl alpha/ values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices. >

1/f Noise Sources

A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear model is well formulated to preserve convergence capabilities and simulation times. Extensive measurements have demonstrated the impact of trapping effects on the shapes of I(V) characteristics, as well as load cycles. It is shown that accurate modeling of gate-and drain-lag effects dramatically improves the large-signal simulation results. This is particularly true when the output loads deviate from the optimum matching conditions corresponding to real-world simulations. This new model and its modeling approach are presented here. Large-signal simulation results are then reported and compared to load-pull and large-signal network analyzer measurements for several load impedances at high voltage standing wave ratio and at two frequencies.

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An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Steady-State Solutions on Nonlinear Circuits. Nonlinear Analysis Techniques. Global Stability Analysis of Nonlinear Circuits. Global Stability Analysis of Microwave Circuits. Bifurcation Routes to Chaos.

Stability Analysis of Nonlinear Microwave Circuits

A new design methodology of uniform and nonuniform distributed power amplifiers is reported in this paper. This method is based on analytical expressions of the optimum input and output artificial lines making up the uniform and nonuniform distributed architectures. These relationships are derived from the load-line requirement of each transistor size for optimum power operation. Furthermore, specific design criteria are presented to enable an efficient choice between uniform and nonuniform distributed architectures. To validate this new design methodology, a nonuniform distributed power amplifier has been manufactured at the TriQuint Semiconductor Foundry, Richardson, TX, using a 0.25-/spl mu/m power pseudomorphic high electron-mobility process. This single-stage monolithic-microwave integrated-circuit amplifier is made of six nonuniform cells and demonstrates 1-W output power with 7-dB associated gain and 20% power-added efficiency over a multioctave bandwidth.

New design method of uniform and nonuniform distributed power amplifiers

For the first time, an exhaustive linear and nonlinear stability analysis of multitransistors monolithic-microwave integrated-circuit (MMIC) circuits is presented A key point of the proposed stability analysis lies in that it can be easily implemented on any computer-aided design (CAD) software The presented approach allows both linear and nonlinear stability analysis of any complex circuit fed by small or large signals Two examples are given that demonstrate the accuracy of the method The first example concerns a MMIC HBT power amplifier, which exhibited division frequency phenomena and spurious oscillations that were detected by simulations and confirmed by measurements The second example deals with a voltage-controlled oscillator and demonstrates that the method can also predict spurious oscillations in autonomous circuits

A unified approach for the linear and nonlinear stability analysis of microwave circuits using commercially available tools

A versatile pulsed I(V) and 40-GHz RF measurement system is described with all the know-how and methods to perform efficient, safe, and reliable nonlinear transistor measurements. Capability of discrimination between thermal and trapping effects with a pulse setup is demonstrated. Capture and emission constant times of trapping effects are measured. A method to electrically measure the thermal resistance and capacitance of transistors with a pulse setup is proposed.

Raymond Quéré

Papers

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Stability Analysis of Nonlinear Microwave Circuits

New design method of uniform and nonuniform distributed power amplifiers

A unified approach for the linear and nonlinear stability analysis of microwave circuits using commercially available tools

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization