Jian Yu

TL;DR: Tungsten doped indium oxide (IWO) film was deposited by reactive plasma deposition technology for a-Si:H/c-Si heterojunction (SHJ) solar cell as discussed by the authors.

TL;DR: In this article , the authors reported that light soaking can efficiently boost the dark conductance of boron-doped a-Si:H thin films and achieved a certified total area power conversion efficiency of 25.18% with a FF of 85.42% on a 244.63 cm 2 wafer.

TL;DR: In this article, three different dopant indium oxide thin films were fabricated at low temperatures by reactive plasma deposition and sputtering, and the optical and electrical properties of these films were analyzed as a function of the Hall electron concentration.

TL;DR: In this article, the authors developed a facile and effective method to modify the electrical properties of ITO/a-Si:H(p) contact by thermal evaporation an ultrathin MoO x buffer layer.

TL;DR: In this article , the dopant-free passivating contacts (DFPCs) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease of deposition, and cost.