Jiangshan Feng

TL;DR: Yang et al. modify the oxide based electron transporting layer with organic acid and obtain planar-type cells with high certified efficiency of 21.5% and decent stability and success in suppressing hysteresis and record efficiency for planars-type devices using EDTA-complexed tin oxide (SnO2) electron-transport layer.

TL;DR: A novel dimethyl sulfide (DS) additive is developed to effectively improve the performance of the F-PSCs, revealing that the DS additive reacts with Pb2+ to form a chelated intermediate, which significantly slows down the crystallization rate, leading to large grain size and good crystallinity for the resultant perovskite film.

TL;DR: Experimental analyses reveal that the Nb:SnO2 ETL significantly enhances the electron extraction and effectively suppresses charge recombination, leading to improved solar cell performance.

TL;DR: By fine-tuning the crystal nucleation and growth process, a low-temperature-gradient crystallization method is developed to fabricate high-quality perovskite CH3 NH3 PbBr3 single crystals with high carrier mobility, long carrier lifetime, and ultralow trap state density that are better than commercial sensors made of silicon and InGaAs.

TL;DR: In this article, the effect of Nb2O5 thickness on optical and electronic properties of the perovskite layer deposited thereupon are studied in detail, and it is found that 60nm thick Nb 2O5 ETL delivers the best photovoltaic performance with PCE as high as 18.59%.