The invention discloses a cavity film bulk acoustic resonator and a preparation method thereof, belonging to the technical field of acoustic resonators The preparation method comprises the steps of growing a film structure layer in the acoustic resonator on a preparation substrate; fixing both the preparation substrate and the film structure layer growing on the preparation substrate on a support substrate through one side of the film structure layer so as to form a cavity between the support substrate and the film structure layer; and stripping the film structure layer off the preparation substrate The film structure layer comprises a support layer, or comprises a support layer and a bottom electrode, or comprises a support layer, a bottom electrode and a piezoelectric film, or comprises a support layer, a bottom electrode, a piezoelectric film and a top electrode, so as to form a structure comprising the support substrate, the support layer, the bottom electrode, the piezoelectric film and the top electrode that are sequentially overlaid Bad effects on a resonance structure in removing of a sacrificial layer in the conventional process are eliminated, so that the cavity film bulk acoustic resonator prepared by the method has better performances

Cavity film bulk acoustic resonator and preparation method thereof

The invention discloses an SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor which relates to the field of microelectronic inertial components. The acceleration sensor comprises an SAW metal interdigital transducer, a quartz plate and a silicon substrate, wherein the quartz plate is provided with a micro cantilever, and the silicon substrate is provided with a preset groove; the SAW metal interdigital transducer is manufactured on the micro cantilever in the quartz plate; the micro cantilever is bonded on the silicon substrate provided with the preset groove; the quartz plate is thinned through bonding with another silicon substrate without groove firstly, then transferred to the silicon substrate provided with the preset groove by using a bonding process; the SAW metal interdigital transducer is manufactured on the part, corresponding to the preset groove, of the quartz plate; and the micro cantilever structure is etched on the quartz plate, so that the SAW metal interdigital transducer is arranged on the micro cantilever. Because the acceleration sensor disclosed by the invention is prepared by using an MEMS process, the acceleration sensor is small in component size and suitable for mass production, therefore, the acceleration sensor provided by the invention is high in reliability, large in sensitive range, low in power consumption, high in precision, small in size and easy to package.

SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof

A fluidic device incorporating a substrate, at least one bulk acoustic wave (BAW) resonator structure, and a fluidic channel bound at least in part by the at least one BAW resonator structure. The fluidic device further includes at least one fluidic via defined through at least a portion of the substrate, thereby permitting fluidic connections and electrical connections to be provided on opposing upper and lower surfaces of the fluidic device. The at least one BAW resonator structure may include a piezoelectric material comprising a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate, and may be overlaid with a functionalization material (e.g., a specific binding material overlying a self-assembled monolayer) to enable detection of a target species in a sample supplied to the fluidic device.

Sensor device with BAW resonator and through-substrate fluidic vias

The invention discloses an on-chip integrated body wave resonator and a manufacturing method thereof. The body wave resonator comprises at least one energy storage element, wherein at least one part of the energy storage element is located within the projection area range of the body wave resonator in the vertical direction. According to the on-chip integrated body wave resonator, the energy storage element is integrated within the projection area range of the body wave resonator in the vertical direction, so integration space of the energy storage element and the body wave resonator can be effectively diminished, and reduction of the size of a chip of the body wave resonator is further facilitated.

On-chip integrated body wave resonator and manufacturing method thereof

A filter package includes a set of piezoelectric films sandwiched between a lower electrode and a series of upper electrodes, silicon films covering the upper electrodes, cavities formed above the silicon films, wherein the lower electrode connected to a switching circuit board, most of the lower electrode and the switching circuit board are separated by a first cavity; the silicon films are provided with a predetermined thickness and combined with a series of upper cavities above the upper electrodes, and each upper cavity is arranged between a series of silicon films and common silicon covers and aligned with the silicon films, the upper electrodes and the piezoelectric thin films centrally, and each upper cavity is provided with a side wall comprising silicon dioxide Each piezoelectricfilm and corresponding upper electrode and the silicon film are separated from the adjacent piezoelectric films, the upper electrodes and the silicon films through a passivation material

RF Resonator and filter

The invention discloses a preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and a manufacturing method thereof, relating to the field of electronic devices. The acoustic wave resonator comprises a cavity SOI substrate and a piezoelectric film transducer arranged on the cavity SOI substrate, wherein the resonator comprises a piezoelectric film, a base electrode and a top electrode; the electrodes of the resonator are approximate to oval; a groove is arranged on the surface of a substrate silicon wafer in the cavity SOI substrate; and a closed cavity structure is formed by a top silicon and the substrate silicon wafer after bonding. Since a preset cavity structure is adopted, no sacrifice layer is used in the resonator and a chemical mechanical polishing process and a sacrifice layer releasing process for treating the sacrifice layers in foreign patents and products are unnecessary. Moreover, the preset cavity type SOI substrate film bulk acoustic wave resonator combines the advantages of SOI material, such as small source and drain parasitic capacitances, low voltage, low power consumption and the like. The resonator provided by the invention is compatible with an IC (integrated circuit), is easily integrated, is manufactured with simple process and is suitable for batch production.

Preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and manufacturing method thereof

The utility model discloses an SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor and relates to the field of micro-electronic inertia devices. The SAW-MEMES acceleration sensor comprises an SAW metal interdigital transducer, a quartz plate with a micro-cantilever beam and a silicon substrate preinstalled with a groove, the SAW metal interdigital transducer is arranged on the micro-cantilever beam in the quartz chip, the micro-cantilever beam is bonded onto the silicon substrate preinstalled with the groove, the quartz chip is transferred onto the silicon substrate preinstalled with the groove by the bonding technology after being bonded with another silicon substrate without a groove and being thinned, an SAW interdigital transducer is arranged at a position on the quartz chip corresponding to the preinstalled groove, and a micro-cantilever beam structure is carved on the quartz chip, so that the SAW interdigital transducer can be arranged on the micro-cantilever beam. The SAW-MEMES acceleration sensor adopts the MEMES technology, is suitable for batch production and has small-sized device. Accordingly, the acceleration sensor is high in reliability, wide in sensitive range, low in power consumption, high in accuracy, small in size and easy to be packed.

SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor

The invention discloses a tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and a manufacturing method thereof, and relates to a frequency tunable resonator and the manufacturing method thereof The tunable preset cavity type SOI substrate film body acoustic resonator comprises an SOI substrate with a cavity and a piezoelectric thin film transducer arranged on the substrate; the resonator comprises a piezoelectric film, a bottom electrode and a top electrode; one side of the bottom electrode close to the preset cavity is provided with an SOI tuning layer, and the thickness of the SOI tuning layer is controlled by controlling corrosion time; the surface of a substrate silicon chip in the SOI substrate with the cavity is provided with a groove; andthe substrate silicon chip and a top layer silicon form a closed cavity structure after being bonded As the preset cavity structure is adopted, the tunable preset cavity type SOI substrate film bodyacoustic resonator has no sacrificial layer, so a chemically mechanical polishing technology and a sacrificial layer releasing technology which are adopted when the sacrificial layer is processed in a foreign patent and a product thereof are not required; meanwhile, the tunable preset cavity type SOI substrate film body acoustic resonator integrates the advantages of small source and drain parasitic capacitance and lower voltage, low power consumption and the like of the SOI material The tunable preset cavity type SOI substrate film body acoustic resonator can be compatible with an integrated circuit (IC), and is easy to integrate, simple in technology and suitable for mass production

Tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and manufacturing method thereof

The utility model discloses a tunable film bulk acoustic resonator with a preinstalled cavity type SOI (silicon on insulator) substrate and relates to a resonator with tunable frequency. The tunable film bulk acoustic resonator comprises the SOI substrate with a preinstalled cavity and a piezoelectric thin film transducer, a piezoelectric thin film, a bottom electrode and a top electrode, wherein the piezoelectric thin film transducer is arranged on the SOI substrate, an SOI tuning layer is arranged on one side of the bottom electrode close to the preinstalled cavity, the thickness of the SOI tuning layer can be controlled by controlling corrosion time, a groove is arranged on the surface of a substrate silicon slice in the SOI substrate with the preinstalled cavity, and the enclosed preinstalled cavity is formed by the substrate silicon slice and a top silicon layer which are bonded. Due to the preinstalled cavity, a sacrifice layer is omitted, and chemically mechanical polishing processing and releasing processing which are adopted to process the sacrifice layer by foreign patents and products thereof are also omitted. Meanwhile, the tunable film bulk acoustic resonator integrates the advantages of low source electrode parasitic capacity and low drain electrode parasitic capacity, low voltage and low power consumption and the like of SOI materials, and is compatible with an IC (integrated circuit), easy to be integrated, simple in process and suitable for batch production.

Jianhua Zhao

Papers

Preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and manufacturing method thereof

SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof

SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor

Tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and manufacturing method thereof

Tunable film bulk acoustic resonator with preinstalled cavity type SOI (silicon on insulator) substrate